High voltage devices with multiple polyimide layers
AssigneeTexas Instruments Incorporated
InventorsYongSeok Park, Makarand Ramkrishna Kulkarni, Ricky Alan Jackson, Byron Lovell Williams, Thomas Dyer Bonifield
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Abstract
In examples, a semiconductor package comprises a first conductive terminal; a second conductive terminal; a conductive pathway coupling the first and second conductive terminals, the conductive pathway configured to generate a magnetic field; a semiconductor die including a circuit configured to detect the magnetic field; and first and second polyimide layers positioned between the conductive pathway and the semiconductor die.
Claims31
A semiconductor package, comprising:
- a first conductive terminal;
- a second conductive terminal;
- a conductive pathway coupling the first and second conductive terminals, the conductive pathway configured to generate a magnetic field;
- a semiconductor die including a circuit configured to detect the magnetic field;
- a first polyimide layer positioned between the conductive pathway and the semiconductor die;
- a second polyimide layer positioned between the first polyimide layer and the conductive pathway;
- an insulative layer disposed on a surface of the conductive pathway;
- and
- a mold compound layer encapsulating the semiconductor die, the insulative layer, and the conductive pathway, wherein a portion of the mold compound layer is disposed between the second polyimide layer and the insulative layer;
- wherein the second polyimide layer exposes a portion of a surface of the first polyimide layer that is opposite the semiconductor die.
A semiconductor package, comprising:
- a first conductive terminal;
- a second conductive terminal;
- a conductive pathway coupling the first and second conductive terminals, the conductive pathway configured to generate a magnetic field;
- a semiconductor die having a surface that includes a circuit configured to detect the magnetic field;
- first, second, and third polyimide layers abutting each other, the circuit positioned closer to the first polyimide layer than to the second and third polyimide layers;
- an insulative layer disposed on a surface of the conductive pathway;
- and
- a mold compound layer abutting the third polyimide layer and encapsulating the semiconductor die, the insulative layer, and the conductive pathway, wherein a portion of the mold compound layer is disposed between the third polyimide layer and the insulative layer;
- wherein the second polyimide layer exposes a portion of a surface of the first polyimide layer that is opposite the semiconductor die.
A semiconductor package, comprising:
- a die pad;
- a semiconductor die positioned on the die pad, the semiconductor die including a circuit configured to detect a magnetic field;
- first and second conductive terminals coupled via a conductive pathway, the conductive pathway configured to generate the magnetic field;
- a first polyimide layer positioned between the circuit and conductive pathway;
- a second polyimide layer positioned between the first polyimide layer and the conductive pathway;
- an insulative layer disposed on a surface of the conductive pathway;
- a mold compound layer encapsulating the semiconductor die, the insulative layer, and the conductive pathway, wherein a portion of the mold compound layer is disposed between the second polyimide layer and the insulative layer;
- and
- a bond pad positioned on the semiconductor die and coupled to a third conductive terminal via an orifice in the first polyimide layer,
- wherein the second polyimide layer exposes a portion of a surface of the first polyimide layer that is opposite the semiconductor die.
Dependencies are inferred from the claim text.