H10N 52/80
Constructional details
H10N52/80 (Constructional details) appears on 675 US grants and 776 published applications in this corpus.
Search patents in H10N- Granted patents
- 675
- Published applications
- 776
- Assignees
- 223
- Inventors
- 1,142
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 4 | 0 |
| 1978 | 0 | 0 |
| 1979 | 1 | 0 |
| 1980 | 1 | 0 |
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 3 | 0 |
| 1985 | 1 | 0 |
| 1986 | 2 | 0 |
| 1987 | 4 | 0 |
| 1988 | 2 | 0 |
| 1989 | 0 | 0 |
| 1990 | 3 | 0 |
| 1991 | 1 | 0 |
| 1992 | 2 | 0 |
| 1993 | 2 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 2 | 0 |
| 2003 | 2 | 0 |
| 2004 | 0 | 2 |
| 2005 | 0 | 3 |
| 2006 | 2 | 1 |
| 2007 | 2 | 2 |
| 2008 | 0 | 3 |
| 2009 | 0 | 1 |
| 2010 | 1 | 3 |
| 2011 | 1 | 4 |
| 2012 | 2 | 5 |
| 2013 | 0 | 7 |
| 2014 | 7 | 27 |
| 2015 | 20 | 19 |
| 2016 | 28 | 28 |
| 2017 | 33 | 55 |
| 2018 | 39 | 65 |
| 2019 | 67 | 80 |
| 2020 | 68 | 89 |
| 2021 | 63 | 73 |
| 2022 | 76 | 84 |
| 2023 | 71 | 100 |
| 2024 | 67 | 57 |
| 2025 | 63 | 41 |
| 2026 | 32 | 27 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- High voltage devices with multiple polyimide layers29 Sep 2026US 12,751,213 B2Texas Instruments Incorporated
- Memory device including bottom electrode bridges and method of manufacture22 Sep 2026US 12,745,572 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Arithmetic device18 Aug 2026US 12,710,922 B2YODA-S, Inc.
- Semiconductor memory device4 Aug 2026US 12,701,717 B2Samsung Electronics Co., Ltd.
- 3D differential sensor16 Jun 2026US 12,656,420 B2Allegro MicroSystems, LLC
- Hall sensor8 Oct 2026US 2026/0309815 A1Cirrus Logic International Semiconductor Ltd.
- Van der waals moiré homobilayer for gate-tunable fractional quantum anomalous hall state1 Oct 2026US 2026/0305183 A1University of Washington
- Magnetoresistance effect element and magnetic memory24 Sep 2026US 2026/0293531 A1TDK Corporation
- Semiconductor device, storage device, and electronic device17 Sep 2026US 2026/0282757 A1Semiconductor Energy Laboratory Co.Ltd.
- Memory device and manufacturing method thereof17 Sep 2026US 2026/0282759 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Arrangements for an integrated sensor119US 7,768,083 B2Allegro MicroSystems, LLC · 2010
- Non-oriented direct coupled gear tooth sensor using a Hall cell107US 4,745,363 ANorth American Philips Corporation · 1988
- Encapsulated Hall effect device104US 4,188,605 A1980
- Plurality of arrangements each including an IC magnetic field sensor and two ferromagnetic field concentrators, and a procedure for incorporating each arrangement into a package98US 5,247,202 ALandis & Gyr Betriebs AG · 1993
- Encapsulatable sensor assembly97US 5,121,289 AHoneywell Inc. · 1992