H10N 52/85
Materials of the active region
H10N52/85 (Materials of the active region) appears on 65 US grants and 85 published applications in this corpus.
Search patents in H10N- Granted patents
- 65
- Published applications
- 85
- Assignees
- 73
- Inventors
- 242
- Latest grant
- 16 Jun 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 1 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 1 | 0 |
| 2003 | 1 | 0 |
| 2004 | 0 | 2 |
| 2005 | 0 | 1 |
| 2006 | 2 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 1 |
| 2009 | 0 | 0 |
| 2010 | 0 | 1 |
| 2011 | 0 | 1 |
| 2012 | 2 | 0 |
| 2013 | 0 | 0 |
| 2014 | 0 | 6 |
| 2015 | 4 | 1 |
| 2016 | 3 | 4 |
| 2017 | 3 | 5 |
| 2018 | 5 | 6 |
| 2019 | 7 | 2 |
| 2020 | 1 | 2 |
| 2021 | 1 | 3 |
| 2022 | 3 | 4 |
| 2023 | 4 | 11 |
| 2024 | 5 | 17 |
| 2025 | 8 | 8 |
| 2026 | 10 | 10 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Low-magnetic-field gallium arsenide quantum hall resistance sample and preparation thereof16 Jun 2026US 12,660,512 B2Beijing Orient Institute of Measurement and Test
- Semiconductor device and method of fabricating the same9 Jun 2026US 12,652,809 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device, storage device, and electronic device with first and second metal oxide channel transistors9 Jun 2026US 12,652,962 B2Semiconductor Energy Laboratory Co.Ltd.
- Magnetic memory element19 May 2026US 12,633,329 B2The University of Tokyo
- Magnetoresistive element and magnetic memory device7 Apr 2026US 12,598,920 B2Tohoku University
- Hall sensor8 Oct 2026US 2026/0309815 A1Cirrus Logic International Semiconductor Ltd.
- Van der waals moiré homobilayer for gate-tunable fractional quantum anomalous hall state1 Oct 2026US 2026/0305183 A1University of Washington
- Semiconductor device, storage device, and electronic device17 Sep 2026US 2026/0282757 A1Semiconductor Energy Laboratory Co.Ltd.
- Gaas hall sensor17 Sep 2026US 2026/0282761 A1TDK-Micronas GmbH
- Anomalous hall effect (ahe)-based read out of logic devices based on interlayer exchange coupling18 Jun 2026US 2026/0173768 A1Intel Corporation
Most cited
By later US patents
- Circular, amorphous metal, Hall effect magnetic field sensor with circumferentially spaced electrodes66US 4,668,914 AInternational Standard Electric Corporation · 1987
- Mesoscopic non-magnetic semiconductor magnetoresistive sensors fabricated with island lithography40US 6,353,317 B1Imperial College of Science, Technology and Medicine · 2002
- Magnetic field sensor with improved electron mobility22US 5,184,106 AGeneral Motors Corporation · 1993
- Magnetic sensor, magnetic sensor apparatus, semiconductor magnetic resistance apparatus, and production method thereof19US 6,590,389 B1Asahi Kasei Kogyo Kabushiki Kaisha · 2003
- Magnetic multilayer device, method for producing such a device, magnetic field sensor, magnetic memory and logic gate using such a device11US 8,247,093 B2Centre National De La Recherche Scientifique · 2012