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US 12,633,329 B2Granted
Magnetic memory element
AssigneeThe University of Tokyo
InventorsSatoru Nakatsuji, Tomoya Higo
Life of this patent
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Abstract
A magnetic memory element includes an antiferromagnetic layer made of a canted antiferromagnet having a magnetic order with a canted magnetic moment, and a contact layer in contact with the antiferromagnetic layer and made of a different material from the canted antiferromagnet. A roughness of an interface between the antiferromagnetic layer and the contact layer is 1.0 nm or less. A spin current flowing through the contact layer is configured to induce a torque to act on the magnetic order of the antiferromagnetic layer, thereby allowing reversal of the magnetic order.
Claims10
A magnetic memory element comprising:
- an antiferromagnetic layer made of a canted antiferromagnet having a magnetic order with a canted magnetic moment;
- and
- a contact layer in contact with the antiferromagnetic layer and made of a different material from the canted antiferromagnet, wherein
- a roughness of an interface between the antiferromagnetic layer and the contact layer is 1.0 nm or less, and
- when a write current flows through the contact layer in an in-plane direction or the write current flows through the contact layer and the antiferromagnetic layer in an out-of-plane direction, spin torque is generated to act on the magnetic order of the antiferromagnetic layer, thereby allowing reversal of the magnetic order.
2 more elements
Dependencies are inferred from the claim text.