Magnetoresistive element and magnetic memory device

A magnetoresistive effect element, comprising:

• a magnetoresistive effect element including:
• a reference layer, a barrier layer, a recording layer, and a channel layer that are disposed on top of one another;
• and
• a first terminal connected to the reference layer, and a second terminal and a third terminal connected to the channel layer;
• a write circuit connected between the second terminal and the third terminal;
• and
• a read circuit connected between the first terminal and the third terminal, wherein
• the channel layer includes a first channel layer to which the second terminal is connected and a second channel layer to which the third terminal is connected;
• the write circuit includes a first transistor connected to the second terminal and the second transistor connected to the third terminal, and is configured to write data to a magnetoresistive effect element by a write current that flows between the second terminal and the third terminal via the first channel layer and the second channel layer when the first and second transistors are turned on;
• the read circuit is configured to read data from the magnetoresistive effect element by a read current that flows between the first terminal and the third terminal when the second transistor is turned on;
• and
• a sum of an electrical resistance of the first channel layer and an on-resistance of the first transistor is greater than a sum of an electrical resistance of the second channel layer and an on-resistance of the second transistor.