Spin current magnetization rotational element, magnetoresistance effect element and magnetic memory
AssigneeTDK Corporation
InventorsTomoyuki Sasaki, Tohru Oikawa
Life of this patent
Estimating the term…
Abstract
This spin current magnetization rotational element includes a second ferromagnetic metal layer having a variable magnetization orientation, and spin-orbit torque wiring, which extends in a direction that intersects a direction perpendicular to the surface of the second ferromagnetic metal layer, and is connected to the second ferromagnetic metal layer, wherein the spin resistance of a connection portion of the spin-orbit torque wiring that is connected to the second ferromagnetic metal layer is larger than the spin resistance of the second ferromagnetic metal layer.
Claims22
A spin current magnetization rotational element comprising:
- a ferromagnetic metal layer having a variable magnetization direction, and
- spin-orbit torque wiring which is connected to the ferromagnetic metal layer, wherein:
- the ferromagnetic metal layer has a surface that opposes the spin-orbit torque wiring;
- the spin-orbit torque wiring extends beyond the surface in one or more directions parallel to the surface;
- a spin resistance Rs of a connection portion of the spin-orbit torque wiring that is connected to the ferromagnetic metal layer is larger than a spin resistance Rs of the ferromagnetic metal layer;
- and
- the spin resistance RS, is defined by a formula (1),
- R
- s
- ≡
- ρλ
- A
- (
- 1
- )
- in the formula (1), λ represents a spin diffusion length of the material, ρ represents a electrical resistivity of a material, and A represents a cross-sectional area of the material.
Dependencies are inferred from the claim text.