H10D 86/03
Wherein the substrate comprises sapphire
Official title: wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS]
H10D86/03 (Wherein the substrate comprises sapphire) appears on 435 US grants and 321 published applications in this corpus.
Search patents in H10D- Granted patents
- 435
- Published applications
- 321
- Assignees
- 169
- Inventors
- 760
- Latest grant
- 24 Mar 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 7 | 0 |
| 1977 | 4 | 0 |
| 1978 | 11 | 0 |
| 1979 | 5 | 0 |
| 1980 | 7 | 0 |
| 1981 | 8 | 0 |
| 1982 | 6 | 0 |
| 1983 | 10 | 0 |
| 1984 | 4 | 0 |
| 1985 | 7 | 0 |
| 1986 | 6 | 0 |
| 1987 | 7 | 0 |
| 1988 | 13 | 0 |
| 1989 | 2 | 0 |
| 1990 | 1 | 0 |
| 1991 | 8 | 0 |
| 1992 | 5 | 0 |
| 1993 | 1 | 0 |
| 1994 | 3 | 0 |
| 1995 | 5 | 0 |
| 1996 | 4 | 0 |
| 1997 | 5 | 0 |
| 1998 | 3 | 0 |
| 1999 | 7 | 0 |
| 2000 | 5 | 0 |
| 2001 | 4 | 2 |
| 2002 | 3 | 2 |
| 2003 | 6 | 5 |
| 2004 | 3 | 5 |
| 2005 | 5 | 22 |
| 2006 | 6 | 13 |
| 2007 | 11 | 15 |
| 2008 | 9 | 7 |
| 2009 | 12 | 10 |
| 2010 | 9 | 9 |
| 2011 | 10 | 15 |
| 2012 | 7 | 12 |
| 2013 | 12 | 22 |
| 2014 | 18 | 20 |
| 2015 | 22 | 19 |
| 2016 | 18 | 14 |
| 2017 | 19 | 15 |
| 2018 | 11 | 6 |
| 2019 | 17 | 10 |
| 2020 | 15 | 19 |
| 2021 | 12 | 11 |
| 2022 | 9 | 17 |
| 2023 | 9 | 16 |
| 2024 | 23 | 19 |
| 2025 | 17 | 11 |
| 2026 | 4 | 5 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Semiconductor device and manufacturing method thereof12 Mar 2026US 2026/0075865 A1Tohoku University
- Improved integrated passive device dies and methods of forming and placement of the same12 Mar 2026US 2026/0076233 A1Taiwan Semiconductor Manufacturing Company.Ltd
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Most cited
By later US patents
- Method for forming a film and method for manufacturing a thin film transistor649US 5,480,818 AFujitsu Limited · 1996
- Near-intrinsic thin-film SOI FETS196US 5,164,805 AMassachusetts Institute of Technology · 1992
- Monolithic integration of silicon and gallium arsenide devices178US 4,774,205 AMassachusetts Institute of Technology · 1988
- MOS/SOS Process153US 4,272,880 AIntel Corporation · 1981
- Sidewall channel stop process143US 4,753,896 ATexas Instruments Incorporated · 1988