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US 12,501,643 B2Granted
Electronic device comprising transistors
AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorsRené Escoffier, Blend Mohamad
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Abstract
An electronic device including semiconductor region located on a gallium nitride layer, two electrodes, located on either side of and insulated from the semiconductor region, the electrodes partially penetrating into the gallium nitride layer, and two lateral MOS transistors formed inside and on top of the semiconductor region.
Claims16
Electronic device comprising:
- a semiconductor region located on a gallium nitride layer and partially penetrating into the gallium nitride layer;
- two electrodes, located on either side of and not in contact with the semiconductor region, the electrodes partially penetrating into the gallium nitride layer and being connected to the semiconductor region via a two-dimensional electron gas;
- and
- two lateral MOS transistors formed inside and on top of the semiconductor region and connected in series between the two electrodes.
1 more element
Dependencies are inferred from the claim text.