Semiconductor device

A semiconductor device, comprising:

• a substrate, comprising an active element region and a passive element region;
• a compound semiconductor channel layer, disposed on the substrate and located in the active element region and the passive element region;
• a compound semiconductor barrier layer, stacked on the compound semiconductor channel layer and located in the active element region and the passive element region;
• a source electrode, a gate electrode and a drain electrode, disposed on the compound semiconductor barrier layer and located in the active element region to construct a high electron mobility transistor;
• and
• a first terminal electrode, an intermediate electrode and a second terminal electrode, disposed on the compound semiconductor barrier layer and located in the passive element region to construct a resistor, wherein the second terminal electrode of the resistor is electrically coupled to the gate electrode of the high electron mobility transistor, and the first terminal electrode of the resistor is electrically coupled to a gate driver.