H10D 86/011
Comprising finfets
Official title: {comprising FinFETs}
H10D86/011 (Comprising finfets) appears on 2,676 US grants and 2,724 published applications in this corpus.
Search patents in H10D- Granted patents
- 2,676
- Published applications
- 2,724
- Assignees
- 185
- Inventors
- 2,225
- Latest grant
- 8 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2000 | 1 | 0 |
| 2001 | 0 | 0 |
| 2002 | 1 | 2 |
| 2003 | 3 | 4 |
| 2004 | 3 | 7 |
| 2005 | 9 | 26 |
| 2006 | 12 | 24 |
| 2007 | 24 | 38 |
| 2008 | 20 | 33 |
| 2009 | 24 | 33 |
| 2010 | 32 | 31 |
| 2011 | 31 | 63 |
| 2012 | 46 | 66 |
| 2013 | 88 | 137 |
| 2014 | 127 | 198 |
| 2015 | 238 | 318 |
| 2016 | 372 | 366 |
| 2017 | 400 | 339 |
| 2018 | 303 | 272 |
| 2019 | 277 | 211 |
| 2020 | 197 | 188 |
| 2021 | 146 | 103 |
| 2022 | 95 | 73 |
| 2023 | 79 | 67 |
| 2024 | 67 | 65 |
| 2025 | 60 | 42 |
| 2026 | 21 | 18 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Fabrication of nano-sheet transistors with different threshold voltages18 Aug 2026US RE51,009 E1Adeia Semiconductor Solutions LLC
- Leakage reduction methods and structures thereof21 Jul 2026US 12,690,260 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure having dielectric structure extending into second cavity of semiconductor fin14 Jul 2026US 12,684,798 B2Taiwan Semiconductor Manufacturing Company.Ltd
- CMOS structure, and fabrication methods of FinFET CMOS, FD CMOS and GAA CMOS23 Jun 2026US 12,666,716 B2Xidian University
- Gate etch back with reduced loading effect10 Sep 2026US 2026/0271372 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Light detection device, method for manufacturing the same, and electronic device3 Sep 2026US 2026/0262286 A1Sony Semiconductor Solutions Corporation
- Semiconductor device and methods of formation13 Aug 2026US 2026/0239740 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Metal etching with reduced tilt angle13 Aug 2026US 2026/0239905 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure and related methods6 Aug 2026US 2026/0231527 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Cut-mask patterning process for fin-like field effect transistor (FinFET) device3,286US 9,236,267 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- FinFET devices with unique fin shape and the fabrication thereof1,337US 9,548,303 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- System and methods for converting planar design to FinFET design1,326US 8,816,444 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Finfet transistor structures having a double gate channel extending vertically from a substrate and methods of manufacture600US 6,413,802 B1The Regents of the University of California · 2002
- Strained channel integrated circuit devices569US 8,729,627 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014