H10D 84/966
Gate electrode terminals or contacts
Official title: {Gate electrode terminals or contacts}
H10D84/966 (Gate electrode terminals or contacts) appears on 243 US grants and 216 published applications in this corpus.
Search patents in H10D- Granted patents
- 243
- Published applications
- 216
- Assignees
- 29
- Inventors
- 230
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2007 | 0 | 1 |
| 2008 | 1 | 0 |
| 2009 | 0 | 4 |
| 2010 | 1 | 58 |
| 2011 | 19 | 4 |
| 2012 | 42 | 1 |
| 2013 | 2 | 9 |
| 2014 | 6 | 3 |
| 2015 | 4 | 8 |
| 2016 | 10 | 12 |
| 2017 | 35 | 12 |
| 2018 | 26 | 14 |
| 2019 | 26 | 13 |
| 2020 | 12 | 6 |
| 2021 | 16 | 15 |
| 2022 | 12 | 14 |
| 2023 | 10 | 10 |
| 2024 | 8 | 16 |
| 2025 | 8 | 3 |
| 2026 | 5 | 13 |
By publication year. 2026 runs to 8 Oct.
Recent patents
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- Reconfigurable complementary metal oxide semiconductor device and method15 Sep 2026US 12,740,143 B2GlobalFoundries Dresden Module One Limited Liability Company & Co. KG
- Semiconductor structure and manufacturing method thereof11 Aug 2026US 12,707,683 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Integrated circuit and method of forming the same23 Jun 2026US 12,666,712 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Integrated circuit3 Mar 2026US 12,568,685 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure and manufacturing method thereof8 Oct 2026US 2026/0313980 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Integrated circuit and method of forming the same8 Oct 2026US 2026/0314065 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor devices having gate contact and related methods8 Oct 2026US 2026/0314067 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Integrated circuit and method of forming the same1 Oct 2026US 2026/0304951 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Device leakage and yield for cells1 Oct 2026US 2026/0304953 A1QUALCOMM Incorporated
Most cited
By later US patents
- Dynamic array architecture227US 7,446,352 B2Tela Innovations, Inc. · 2008
- Integrated circuit having gate electrode level region including at least four linear-shaped conductive structures with some outer-contacted linear-shaped conductive structures having larger outer extending portion than inner extending portion159US 8,134,184 B2Tela Innovations, Inc. · 2012
- Methods for defining dynamic array section with manufacturing assurance halo and apparatus implementing the same152US 7,888,705 B2Tela Innovations, Inc. · 2011
- Semiconductor device with dynamic array section148US 7,917,879 B2Tela Innovations, Inc. · 2011
- Dynamic array architecture142US 7,842,975 B2Tela Innovations, Inc. · 2010