H10D 84/911
Basic cell p to n transistor counts
Official title: {Basic cell P to N transistor counts}
H10D84/911 (Basic cell p to n transistor counts) appears on 139 US grants and 163 published applications in this corpus.
Search patents in H10D- Granted patents
- 139
- Published applications
- 163
- Assignees
- 21
- Inventors
- 122
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2007 | 0 | 1 |
| 2008 | 1 | 0 |
| 2009 | 0 | 4 |
| 2010 | 1 | 58 |
| 2011 | 19 | 4 |
| 2012 | 42 | 1 |
| 2013 | 3 | 8 |
| 2014 | 5 | 2 |
| 2015 | 2 | 4 |
| 2016 | 5 | 5 |
| 2017 | 5 | 8 |
| 2018 | 4 | 7 |
| 2019 | 4 | 12 |
| 2020 | 8 | 10 |
| 2021 | 8 | 10 |
| 2022 | 7 | 7 |
| 2023 | 6 | 6 |
| 2024 | 4 | 7 |
| 2025 | 9 | 8 |
| 2026 | 6 | 1 |
By publication year. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Hybrid cell height design with a backside power distribution network29 Sep 2026US 12,751,083 B2International Business Machines Corporation
- Integrated circuit device and method of forming the same26 May 2026US 12,641,875 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Sram cell structure with 3 p-channel transistors and 3 n-channel transistors and method of operating the sram cell5 May 2026US 12,621,976 B2Gwangju Institute of Science and Technology
- Integrated circuit including standard cells, and method of designing the integrated circuit28 Apr 2026US 12,615,847 B2Samsung Electronics Co., Ltd.
- Four-transistor static random access memory cell with enhanced data retention10 Mar 2026US 12,573,451 B2Flashsilicon Incorporation
- Integrated circuit4 Jun 2026US 2026/0156934 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Track stealing for standard cell height compaction4 Dec 2025US 2025/0374670 A1QUALCOMM Incorporated
- Integrated circuit and method of forming the same13 Nov 2025US 2025/0348652 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Four-transistor static random access memory cell with enhanced data retention13 Nov 2025US 2025/0349352 A1Flashsilicon Incorporation
- Power rail and signal conducting line arrangement4 Sep 2025US 2025/0280600 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Dynamic array architecture227US 7,446,352 B2Tela Innovations, Inc. · 2008
- Integrated circuit having gate electrode level region including at least four linear-shaped conductive structures with some outer-contacted linear-shaped conductive structures having larger outer extending portion than inner extending portion159US 8,134,184 B2Tela Innovations, Inc. · 2012
- Methods for defining dynamic array section with manufacturing assurance halo and apparatus implementing the same152US 7,888,705 B2Tela Innovations, Inc. · 2011
- Semiconductor device with dynamic array section148US 7,917,879 B2Tela Innovations, Inc. · 2011
- Dynamic array architecture142US 7,842,975 B2Tela Innovations, Inc. · 2010