H10D 84/912
4-t cmos basic cells
Official title: {4-T CMOS basic cells}
H10D84/912 (4-t cmos basic cells) appears on 113 US grants and 128 published applications in this corpus.
Search patents in H10D- Granted patents
- 113
- Published applications
- 128
- Assignees
- 12
- Inventors
- 65
- Latest grant
- 26 May 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2007 | 0 | 1 |
| 2008 | 1 | 0 |
| 2009 | 0 | 1 |
| 2010 | 1 | 58 |
| 2011 | 16 | 0 |
| 2012 | 41 | 1 |
| 2013 | 2 | 8 |
| 2014 | 3 | 1 |
| 2015 | 2 | 3 |
| 2016 | 4 | 2 |
| 2017 | 2 | 6 |
| 2018 | 3 | 3 |
| 2019 | 3 | 9 |
| 2020 | 6 | 6 |
| 2021 | 5 | 8 |
| 2022 | 5 | 7 |
| 2023 | 5 | 4 |
| 2024 | 4 | 5 |
| 2025 | 7 | 4 |
| 2026 | 3 | 1 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Integrated circuit device and method of forming the same26 May 2026US 12,641,875 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Integrated circuit including standard cells, and method of designing the integrated circuit28 Apr 2026US 12,615,847 B2Samsung Electronics Co., Ltd.
- Integrated circuit3 Mar 2026US 12,568,685 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Integrated circuit including integrated standard cell structure4 Nov 2025US 12,464,821 B2Samsung Electronics Co., Ltd.
- Semiconductor integrated circuit device26 Aug 2025US 12,402,409 B2Socionext Inc.
- Integrated circuit4 Jun 2026US 2026/0156934 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Track stealing for standard cell height compaction4 Dec 2025US 2025/0374670 A1QUALCOMM Incorporated
- Power rail and signal conducting line arrangement4 Sep 2025US 2025/0280600 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Integrated circuit21 Aug 2025US 2025/0267936 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device including standard cells10 Apr 2025US 2025/0120176 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Dynamic array architecture227US 7,446,352 B2Tela Innovations, Inc. · 2008
- Integrated circuit having gate electrode level region including at least four linear-shaped conductive structures with some outer-contacted linear-shaped conductive structures having larger outer extending portion than inner extending portion159US 8,134,184 B2Tela Innovations, Inc. · 2012
- Dynamic array architecture142US 7,842,975 B2Tela Innovations, Inc. · 2010
- Semiconductor device having at least three linear-shaped electrode level conductive features of equal length positioned side-by-side at equal pitch141US 8,058,671 B2Tela Innovations, Inc. · 2011
- Semiconductor device and associated layouts having transistors formed from linear conductive segment with non-active neighboring linear conductive segment140US 7,910,958 B2Tela Innovations, Inc. · 2011