Semiconductor device having at least three linear-shaped electrode level conductive features of equal length positioned side-by-side at equal pitch

An integrated circuit device, comprising:

• a gate electrode level region that forms part of a gate electrode level of the integrated circuit device, the gate electrode level region including at least three linear conductive segments each formed to have a respective length and a respective width when viewed from above, wherein a size of the length of a given linear conductive segment is greater than a size of the width of the given linear conductive segment, and
• wherein the at least three linear conductive segments are formed to have their lengths extend in a first direction in a parallel manner, and
• wherein each of the at least three linear conductive segments is defined to have a substantially equal length as measured in the first direction, and
• wherein the at least three linear conductive segments are positioned in a side-by-side manner according to a substantially equal centerline-to-centerline spacing as measured in a second direction perpendicular to the first direction, and
• wherein at least one of the at least three linear conductive segments forms both a gate electrode of a first transistor of a first transistor type and a gate electrode of a first transistor of a second transistor type.

An integrated circuit device comprising:

• a gate electrode level region that forms part of a gate electrode level of the integrated circuit device, the gate electrode level region including at least three linear conductive segments each formed to have a respective length and a respective width when viewed from above, wherein a size of the length of a given linear conductive segment is greater than a size of the width of the given linear conductive segment,
• wherein the at least three linear conductive segments are formed to have their lengths extend in a first direction in a parallel manner, and
• wherein each of the at least three linear conductive segments is defined to have a substantially equal length as measured in the first direction,
• wherein the at least three linear conductive segments are positioned in a side-by-side manner according to a substantially equal centerline-to-centerline spacing as measured in a second direction perpendicular to the first direction;
• and
• a substrate region that forms part of a substrate of the integrated circuit device, wherein the gate electrode level region is formed over the substrate region, the substrate region including a number of diffusion regions of transistors,
• wherein the at least three linear conductive segments includes a first linear conductive segment that forms a gate electrode of a first transistor of a first transistor type, wherein the first transistor of the first transistor type is formed in part by a first diffusion region electrically connected directly to either a power supply or a reference ground potential,
• wherein the at least three linear conductive segments includes a second linear conductive segment that forms a gate electrode of a second transistor of the first transistor type, wherein the second transistor of the first transistor type is formed in part by a second diffusion region electrically connected directly to either the power supply or the reference ground potential,
• wherein the at least three linear conductive segments include a third linear conductive segment that forms a gate electrode of a third transistor of the first transistor type, and
• wherein the at least three linear conductive segments include a fourth linear conductive segment that forms a gate electrode of a fourth transistor of the first transistor type.