Semiconductor device including standard cells
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTa-Pen GUO, Lee-Chung LU, Li-Chun TIEN
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Abstract
A semiconductor device includes a plurality of standard cells. The plurality of standard cells include a first group of standard cells arranged in a first row extending in a row direction and a second group of standard cells arranged in a second row extending in the row direction. The first group of standard cells and the second group of standard cells are arranged in a column direction. A cell height of the first group of standard cells in the column direction is different from a cell height of the second group of standard cells in the column direction.
Claims20
A semiconductor device, comprising;
- a first group of transistors arranged in a first row extending in a first direction,
- wherein each of the transistors in the first group of transistors includes at least one first channel region, and
- a first cell height of the first group of transistors along a column direction is determined based on a number of the first channel regions within a first transistor in the first group of transistors;
- and
- a second group of transistors arranged in a second row extending in the first direction, wherein each of the transistors in the second group of transistors includes at least one second channel region, and
- a second cell height of the second group of transistors along the column direction is determined based on a number of the second channel regions within a second transistor cell in the second group of transistors,
- wherein the second cell height is greater than the first cell height.
A semiconductor device including a plurality of transistors, wherein:
- the plurality of transistors include a first group of transistors arranged in a first row extending in a row direction and a second group of transistors arranged in a second row extending in the row direction, and a third transistor,
- the first group of transistors and the second group of transistors are arranged in a column direction,
- wherein each of the transistors in the first group of transistors includes at least one first channel region,
- each of the transistors in the second group of transistors includes at least one second channel region,
- a first cell height of the first group of transistors along a column direction is determined based on a number of the first channel regions within a first transistor in the first group of transistors,
- a second cell height of the second group of transistors along the column direction is determined based on a number of the second channel regions within a second transistor of the second group of transistors,
- the cell height of the first group of transistors is different from the cell height of the second group of transistors, and
- the third transistor is disposed over the first row and the second row.
A semiconductor device including a plurality of transistors, wherein:
- the plurality of transistors include a first group of transistors arranged in a first row extending in a row direction, a second group of transistors arranged in a second row extending in the row direction, and a third group of transistors arranged in a third row extending in the row direction,
- the first group of transistors, the second group of transistors and the third group of transistors are arranged in a column direction,
- a first cell height of the first group of transistors along the column direction is determined based on a number of first channel regions within the first transistors,
- a second cell height of the second group of transistors along the column direction is determined based on a number of second channel regions within the second transistors,
- a third cell height of the third group of transistors along the column direction is determined based on a number of third channel regions within the third transistors, and
- a cell height of the first group of transistors, a cell height of the second group of transistors, and a cell height of the third group of transistors are different from each other.
Dependencies are inferred from the claim text.