H10D 84/645
Combinations of only lateral bjts
Official title: {Combinations of only lateral BJTs}
H10D84/645 (Combinations of only lateral bjts) appears on 202 US grants and 174 published applications in this corpus.
Search patents in H10D- Granted patents
- 202
- Published applications
- 174
- Assignees
- 92
- Inventors
- 359
- Latest grant
- 4 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 1 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 1 | 0 |
| 1993 | 2 | 0 |
| 1994 | 3 | 0 |
| 1995 | 1 | 0 |
| 1996 | 3 | 0 |
| 1997 | 4 | 0 |
| 1998 | 4 | 0 |
| 1999 | 5 | 0 |
| 2000 | 5 | 0 |
| 2001 | 3 | 2 |
| 2002 | 4 | 1 |
| 2003 | 11 | 2 |
| 2004 | 1 | 2 |
| 2005 | 0 | 1 |
| 2006 | 2 | 2 |
| 2007 | 1 | 1 |
| 2008 | 1 | 2 |
| 2009 | 1 | 5 |
| 2010 | 4 | 5 |
| 2011 | 3 | 4 |
| 2012 | 2 | 7 |
| 2013 | 7 | 8 |
| 2014 | 13 | 9 |
| 2015 | 9 | 8 |
| 2016 | 10 | 17 |
| 2017 | 21 | 18 |
| 2018 | 20 | 15 |
| 2019 | 12 | 5 |
| 2020 | 5 | 7 |
| 2021 | 5 | 5 |
| 2022 | 4 | 8 |
| 2023 | 4 | 13 |
| 2024 | 10 | 16 |
| 2025 | 9 | 7 |
| 2026 | 7 | 4 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor devices including conductive structures4 Aug 2026US 12,701,987 B2Samsung Electronics Co., Ltd.
- Auto-doping reduction in semiconductor structure28 Jul 2026US 12,696,505 B2Texas Instruments Incorporated
- Bipolar junction transistor (BJT) structure28 Jul 2026US 12,696,526 B2Mediatek Inc.
- Multiple-depth trench isolation for electrostatic discharge protection devices23 Jun 2026US 12,666,664 B2Globalfoundries Singapore Pte. Ltd.
- Semiconductor device and electronic apparatus9 Jun 2026US 12,652,854 B2Rohm Co., Ltd.
- Semiconductor device11 Jun 2026US 2026/0164687 A1Samsung Electronics Co., Ltd.
- Separate metal regions in a layer of a pillar bar via on a transistor row in an integrated circuit (ic) to reduce stress and related fabrication methods26 Mar 2026US 2026/0090362 A1QUALCOMM Incorporated
- Beta variation insensitive gain control circuit for cross-coupled differential pairs15 Jan 2026US 2026/0019054 A1MACOM Technology Solutions Holdings, Inc.
- Cascaded bipolar junction transistor and methods of forming the same15 Jan 2026US 2026/0020269 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Electrostatic discharge semiconductor device and manufacturing method thereof23 Oct 2025US 2025/0331310 A1Joulwatt Technology Co., Ltd.
Most cited
By later US patents
- Lateral transistor on polymer280US 8,835,978 B2Infineon Technologies AG · 2014
- Another technique for gated lateral bipolar transistors59US 6,307,235 B1Micron Technology, Inc. · 2001
- High frequency analog transistors, method of fabrication and circuit implementation51US 5,668,397 AHarris Corporation · 1997
- Thermoelectric cooling system40US 5,895,964 APioneer Electronic Corporation · 1999
- Method of forming high speed, high voltage fully isolated bipolar transistors on a SOI substrate37US 5,344,785 AUnited Technologies Corporation · 1994