Multiple-depth trench isolation for electrostatic discharge protection devices
AssigneeGlobalfoundries Singapore Pte. Ltd.
InventorsKyong Jin Hwang, Souvick Mitra
Life of this patent
Estimating the term…
Abstract
Structures including an electrostatic discharge protection device and methods of forming same. The structure comprises a semiconductor substrate having a top surface, an electrostatic discharge protection device including a base in the semiconductor substrate, and first and second trench isolation regions disposed in the base of the electrostatic discharge protection device. The first trench isolation region extends from the top surface of the semiconductor substrate to a first depth in the base, the second trench isolation region extends from the top surface of the semiconductor substrate to a second depth in the base, and the second depth greater than the first depth.
Claims20
A structure comprising:
- a semiconductor substrate having a top surface;
- an electrostatic discharge protection device including a base in the semiconductor substrate;
- a first trench isolation region disposed in the base of the electrostatic discharge protection device, the first trench isolation region extending from the top surface of the semiconductor substrate to a first depth in the base;
- and
- a second trench isolation region disposed in the base of the electrostatic discharge protection device, the second trench isolation region extending from the top surface of the semiconductor substrate to a second depth in the base, and the second depth greater than the first depth.
A method comprising:
- forming an electrostatic discharge protection device including a base in a semiconductor substrate;
- forming a first trench isolation region disposed in the base of the electrostatic discharge protection device;
- and
- forming a second trench isolation region disposed in the base of the electrostatic discharge protection device,
- wherein the first trench isolation region extends from a top surface of the semiconductor substrate to a first depth in the base, the second trench isolation region extends from the top surface of the semiconductor substrate to a second depth in the base, and the second depth is greater than the first depth.
Dependencies are inferred from the claim text.