Semiconductor devices including conductive structures

A semiconductor device, comprising:

• a substrate;
• a dielectric structure on the substrate;
• and
• first conductive structures and second conductive structures in the dielectric structure,
• wherein the dielectric structure includes a first dielectric layer that surrounds the first conductive structures and a second dielectric layer that surrounds the second conductive structures,
• wherein the first dielectric layer includes a first intervention between the first conductive structures,
• wherein the second dielectric layer includes a second intervention between the second conductive structures,
• wherein a width of the first intervention in a first direction decreases with decreasing distance from a top surface of the substrate,
• wherein a width of the second intervention in the first direction increases with decreasing distance from the top surface of the substrate,
• wherein the first dielectric layer and the second dielectric layer include different dielectric materials from each other, and
• wherein each of the first conductive structures are spaced apart from each of the second conductive structures along the first direction.

A semiconductor device, comprising:

• a substrate that includes an active pattern;
• a source/drain region on the active pattern;
• a conductive structure connected to the source/drain region;
• and
• a dielectric structure that surrounds the conductive structure,
• wherein the dielectric structure includes a first dielectric layer and a second dielectric layer that include different dielectric materials from each other,
• wherein the conductive structure includes first conductive structures in the first dielectric layer and second conductive structures in the second dielectric layer,
• wherein the first dielectric layer includes a first separation structure between the first conductive structures,
• wherein the second dielectric layer includes a second separation structure between the second conductive structures,
• wherein a width in a first direction of each of the first conductive structures increases with decreasing distance from the substrate,
• wherein a width in the first direction of each of the second conductive structures decreases with decreasing distance from the substrate,
• wherein a width in the first direction of the first separation structure decreases with decreasing distance from the substrate,
• wherein a width in the first direction of the second separation structure increases with decreasing distance from the substrate, and
• wherein each of the first conductive structures are spaced apart from each of the second conductive structures along the first direction.