H10D 84/0198
Integrating together multiple components covered by h10d44/00
Official title: {Integrating together multiple components covered by H10D44/00, e.g. integrating charge coupled devices}
H10D84/0198 (Integrating together multiple components covered by h10d44/00) appears on 64 US grants and 6 published applications in this corpus.
Search patents in H10D- Granted patents
- 64
- Published applications
- 6
- Assignees
- 33
- Inventors
- 97
- Latest grant
- 27 Oct 2020
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 5 | 0 |
| 1977 | 8 | 0 |
| 1978 | 7 | 0 |
| 1979 | 6 | 0 |
| 1980 | 2 | 0 |
| 1981 | 1 | 0 |
| 1982 | 6 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 1 | 0 |
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 1 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 1 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 4 | 0 |
| 1995 | 1 | 0 |
| 1996 | 3 | 0 |
| 1997 | 1 | 0 |
| 1998 | 1 | 0 |
| 1999 | 1 | 0 |
| 2000 | 1 | 0 |
| 2001 | 4 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 2 | 3 |
| 2005 | 2 | 0 |
| 2006 | 0 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 0 |
| 2009 | 0 | 0 |
| 2010 | 0 | 0 |
| 2011 | 0 | 0 |
| 2012 | 0 | 0 |
| 2013 | 0 | 0 |
| 2014 | 0 | 0 |
| 2015 | 0 | 0 |
| 2016 | 0 | 2 |
| 2017 | 0 | 0 |
| 2018 | 1 | 0 |
| 2019 | 1 | 1 |
| 2020 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Sensing device for sensing minor charge variations27 Oct 2020US 10,818,785 B2Ecole Polytechnique Federale De Lausanne (Epfl)
- Semiconductor device, memory circuit, method of manufacturing semiconductor device23 Apr 2019US 10,269,867 B2Sony Corporation
- Semiconductor device having symmetric and asymmetric active fins27 Mar 2018US 9,929,155 B2Samsung Electronics Co., Ltd.
- Methods of forming a transistor having a recessed gate electrode structure24 May 2005US 6,897,114 B2Advanced Micro Devices, Inc.
- Large area, fast frame rate charge coupled device11 Jan 2005US 6,841,811 B2Fairchild Imaging
- Sensing Device for Sensing Minor Charge Variations6 Jun 2019US 2019/0172937 A1Ecole Polytechnique Federale De Lausanne (Epfl)
- Semiconductor device, memory circuit, method of manufacturing semiconductor device3 Nov 2016US 2016/0322422 A1Sony Corporation
- Semiconductor device and method of manufacturing the same6 Oct 2016US 2016/0293598 A1Samsung Electronics Co., Ltd.
- Advanced recessed gate transistor and a method of forming the same1 Jul 2004US 2004/0126965 A1Advanced Micro Devices, Inc.
- Large area, fast frame rate charge coupled device19 Feb 2004US 2004/0033656 A1Fairchild Imaging
Most cited
By later US patents
- Virtual phase charge transfer device68US 4,229,752 ATexas Instruments Incorporated · 1980
- Method of making edge-aligned implants and electrodes therefor58US 4,613,402 AEastman Kodak Company · 1986
- Semiconductor manufacturing method using buried nitride formed by a nitridation treatment in the presence of active nitrogen57US 4,113,515 AU. S. Philips Corporation · 1978
- Method of making transparent polysilicon gate for imaging arrays37US 5,369,040 AWestinghouse Electric Corp. · 1994
- CMOS imager cell having a buried contact and method of fabrication37US 6,291,280 B1Micron Technology, Inc. · 2001