US 9,929,155 B2Granted

Semiconductor device having symmetric and asymmetric active fins

AssigneeSamsung Electronics Co., Ltd.

InventorsJu-youn Kim, Jong-mil Youn

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Abstract

A semiconductor device and a method of manufacturing the same are disclosed, which may improve the operating performance of a multi-gate transistor in a highly scaled integrated circuit device. The semiconductor device includes a first active fin unit protruding on a first region of a semiconductor substrate and extending along a first direction. The first active fin unit includes at least one first active fin having left and right profiles, which are symmetric to each other about a first center line perpendicular to a top surface of the semiconductor substrate on a cut surface perpendicular to the first direction. A second active fin unit protrudes on a second region of the semiconductor substrate and includes two second active fins, each having a left and right profiles, which are asymmetric to each other about a second center line perpendicular to the top surface of the semiconductor substrate on a cut surface.

Claims20

Dependent claims

A semiconductor device comprising:

a semiconductor substrate;
and
an active fin unit protruding on the semiconductor substrate and extending along a first direction, the active fin unit comprising at least two active fins,
wherein each of the at least two active fins comprises a lower active fin surrounded by a device isolation layer and an upper active fin protruding from the device isolation layer,
wherein, when the active fin unit comprises two active fins, each of the two active fins has a left profile and a right profile that are asymmetric to each other about a center line, and when the active fin unit comprises at least three active fins, each of two outermost active fins has a left profile and a right profile that are asymmetric to each other about the center line, and at least one active fin between the two outermost active fins has a left profile and a right profile that are symmetric to each other about the center line,
wherein the center line is defined as a straight line disposed approximately equidistant between left and right points of the lower active fin, which are at a substantially same height above a top surface of the semiconductor substrate, and
wherein the at least one active fin is determined as symmetrical when points of a right side surface and a left side surface of the at least one active fin protruding from the device isolation layer are at a substantially same height, and the at least one active fin is determined as asymmetrical when points of a right side surface and a left side surface of the at least one active fin protruding from the device isolation layer are at a different height.

4 more elements

A semiconductor device comprising:

a semiconductor substrate;
and
an active fin unit protruding on the semiconductor substrate and extending along a first direction, the active fin unit comprising a plurality of active fins,
wherein each of the plurality of active fins comprises a lower active fin surrounded by a device isolation layer and an upper active fin protruding from the device isolation layer,
wherein, two outermost active fins of the plurality of active fins have a left profile and a right profile that are asymmetric to each other about a center line, and points of a right side surface and a left side surface of each of the two outermost active fins protruding from the device isolation layer are at a different height, and
wherein the center line is defined as a straight line disposed approximately equidistant between left and right points of the lower active fin, which are at a substantially same height above a top surface of the semiconductor substrate.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application: 14/985,385Filed 30 Dec 2015
Priority: KR 10-2015-00468602 Apr 2015
Published: US 2016/0293598 A16 Oct 2016
Granted: 27 Mar 2018
Term ends: Not estimatedThe source records don’t support an estimate.

Classification8 codes

H10D 84/834
Of only insulated-gate FETs [IGFET]: comprising FinFETs
H10D 30/62
Insulated-gate field-effect transistors [IGFET]: fin field-effect transistors [FinFET]
H10D 30/6213
Having fin-shaped semiconductor bodies having non-rectangular cross-sections: having rounded corners
H10D 62/124
Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies: shapes, relative sizes or…