Sensing Device for Sensing Minor Charge Variations
AssigneeEcole Polytechnique Federale De Lausanne (Epfl)
InventorsCem ALPER, Mihai Adrian IONESCU, Teodor ROSCA
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Abstract
The present invention relates to a charge sensing device for sensing charge variations in a charge storage area including: a TFET having at least one sense gate; a capacitive coupling for coupling the charge storage area with the sense gate.
Claims18
A charge sensing device for sensing charge variations in a charge storage area including:
- a TFET having at least one sense gate;
- a capacitive coupling for coupling the charge storage area with the sense gate.
A use of a TFET in a charge sensing device for sensing a charge variation of a charge storage area, wherein the charge storage area is capacitively coupled with a sense gate of the TFET, so that a charge variation of the charge storage area causes an electrostatic potential of an intrinsic channel region to variate.
Dependencies are inferred from the claim text.