Sensing device for sensing minor charge variations

A charge sensing device for sensing charge variations in a charge storage area including:

• a TFET having at least one sense gate;
• a capacitive coupling for coupling the charge storage area with the sense gate,
• wherein the channel region of the TFET is capacitively coupled with the sense gate and with a biasing gate separated therefrom, wherein the sense gate is shorter than the biasing gate with respect to a length of the channel region between the source region and the drain region.