H10D 8/051
Of schottky diodes
Official title: {of Schottky diodes}
H10D8/051 (Of schottky diodes) appears on 1,705 US grants and 2,011 published applications in this corpus.
Search patents in H10D- Granted patents
- 1,705
- Published applications
- 2,011
- Assignees
- 513
- Inventors
- 2,644
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 2 | 0 |
| 1979 | 1 | 0 |
| 1980 | 2 | 0 |
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 1 | 0 |
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 2 | 0 |
| 1990 | 2 | 0 |
| 1991 | 1 | 0 |
| 1992 | 9 | 0 |
| 1993 | 6 | 0 |
| 1994 | 2 | 0 |
| 1995 | 4 | 0 |
| 1996 | 0 | 0 |
| 1997 | 10 | 0 |
| 1998 | 10 | 0 |
| 1999 | 14 | 0 |
| 2000 | 14 | 0 |
| 2001 | 12 | 11 |
| 2002 | 20 | 14 |
| 2003 | 15 | 30 |
| 2004 | 21 | 13 |
| 2005 | 18 | 39 |
| 2006 | 24 | 44 |
| 2007 | 24 | 49 |
| 2008 | 23 | 45 |
| 2009 | 22 | 57 |
| 2010 | 51 | 51 |
| 2011 | 42 | 80 |
| 2012 | 49 | 76 |
| 2013 | 82 | 128 |
| 2014 | 111 | 138 |
| 2015 | 138 | 161 |
| 2016 | 143 | 150 |
| 2017 | 146 | 124 |
| 2018 | 113 | 115 |
| 2019 | 109 | 96 |
| 2020 | 112 | 94 |
| 2021 | 59 | 82 |
| 2022 | 57 | 77 |
| 2023 | 55 | 96 |
| 2024 | 65 | 87 |
| 2025 | 67 | 92 |
| 2026 | 43 | 62 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device29 Sep 2026US 12,751,023 B2Vanguard International Semiconductor Corporation
- Merged-PiN Schottky (MPS) diode having non-uniformly spaced wells, and a method for manufacturing the same22 Sep 2026US 12,745,409 B2Nexperia B. V.
- Method for forming a drift region of a superjunction device22 Sep 2026US 12,745,432 B2Infineon Technologies AG
- Transfer device for transferring an electronic component8 Sep 2026US 12,733,190 B2Nexperia B. V.
- Method for preparing Schottky diode and Schottky diode1 Sep 2026US 12,727,181 B2The 13th Research Institute of China Electronics Technology Group Corporation
- Method of stress release in silicon carbide devices1 Oct 2026US 2026/0305201 A1STMicroelectronics International N. V.
- High performance power mosfet with integrated sbd17 Sep 2026US 2026/0282515 A1Microchip Technology Incorporated
- Schottky diode and manufacturing method thereof27 Aug 2026US 2026/0255622 A1ProAsia Semiconductor Corporation
- Semiconductor device and method for manufacturing semiconductor device6 Aug 2026US 2026/0231449 A1Fujitsu Limited
- Diode, rectifier circuit using same, and power-receiving rectenna6 Aug 2026US 2026/0231501 A1Nichia Corporation
Most cited
By later US patents
- Diamond electronic device and process for producing the same282US 5,632,812 ACanon Kabushiki Kaisha · 1997
- Power semiconductor devices that utilize tapered trench-based insulating regions to improve electric field profiles in highly doped drift region mesas and methods of forming same183US 6,191,447 B1Micro-Ohm Corporation · 2001
- Methods of forming power semiconductor devices having tapered trench-based insulating regions therein137US 6,365,462 B2Micro-Ohm Corporation · 2002
- Gallium nitride material devices including an electrode-defining layer and methods of forming the same135US 7,071,498 B2Nitronex Corporation · 2006
- Method for forming an ohmic electrode120US 6,110,813 AMatsushita Electric Industrial Co., Ltd. · 2000