Method for preparing Schottky diode and Schottky diode

A method for preparing a Schottky diode, comprising:

• oxidizing a target N+-type gallium oxide substrate by using a high temperature thermal oxidation process, to obtain a first N−-type gallium oxide drift layer formed on an upper surface of the target N+-type gallium oxide substrate and a second N−-type gallium oxide drift layer formed on a lower surface of the target N+-type gallium oxide substrate;
• preparing a first anode electrode on an upper surface of the first N−-type gallium oxide drift layer and a second anode electrode on a lower surface of the second N−-type gallium oxide drift layer;
• cutting the target N+-type gallium oxide substrate, to obtain a first N+-type gallium oxide substrate and a second N+-type gallium oxide substrate, wherein, an upper surface of the first N+-type gallium oxide substrate is formed the first N−-type gallium oxide drift layer, and a lower surface of the second N+-type gallium oxide substrate is formed the second N−-type gallium oxide drift layer;
• and
• preparing a first cathode electrode on a lower surface of the first N+-type gallium oxide substrate and a second cathode electrode on an upper surface of the second N+-type gallium oxide substrate, to obtain two Schottky diodes.