High performance power mosfet with integrated sbd
AssigneeMicrochip Technology Incorporated
InventorShesh Mani Pandey
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Abstract
A semiconductor device comprises a volume of semiconductor material, an integrated metal oxide semiconductor field-effect transistor (MOSFET), and an integrated Schottky barrier diode (SBD). The volume of semiconductor material includes a first end, a second end spaced vertically below the first end, a first side, and a second side spaced laterally from the first side. The volume of semiconductor material includes an upward projection spaced from the first side. The MOSFET includes a first transistor side located adjacent the first side of the volume of semiconductor material. The first transistor side includes a first well and a first gate. The SBD comprises a Schottky material positioned over at least part of the upward projection.
Claims20
A semiconductor device comprising:
- a volume of semiconductor material including a first end, a second end spaced vertically below the first end, a first side, and a second side spaced laterally from the first side,
- the volume of semiconductor material including an upward projection spaced from the first side, such that the first end includes an upper portion spaced from the first side and a first portion located between the upward projection and the first side, with the first portion of the first end being located closer to the second end than the upper portion;
- an integrated metal oxide semiconductor field-effect transistor (MOSFET) including –
- a first transistor side located adjacent the first side of the volume of semiconductor material, the first transistor side including –
- a first well located adjacent the first end of the volume of semiconductor material, and
- a first gate;
- and
- an integrated Schottky barrier diode (SBD) comprising a Schottky material positioned over at least part of the upward projection.
Dependencies are inferred from the claim text.