Transfer device for transferring an electronic component

A method of manufacturing a vertical semiconductor component operable as an MPS diode, the method comprising:

• providing a substrate;
• providing an epitaxial layer doped with a first conductivity type that is n-doped, on the substrate;
• embedding a plurality of first regions in the epitaxial layer, the plurality of first regions arranged to contact a metal layer on the epitaxial layer, the plurality of first regions doped with a second conductivity type that is p-doped, at a first concentration, in order to form a plurality of pn-junctions with the epitaxial layer;
• embedding each of a plurality of second regions in a first region of the plurality of first regions, the plurality of second regions arranged to contact the metal layer, the plurality of second regions doped with a second conductivity type that is p-doped, at a second concentration higher than the first concentration, in order to form a plurality of low-resistance ohmic contacts with the metal layer;
• and
• depositing the metal layer on the epitaxial layer to form a Schottky contact with the epitaxial layer and to form low-resistance ohmic contacts with the first and the second regions, so that the semiconductor component comprises a cross section in a lateral direction of the vertical semiconductor component, and along the cross section a number of first regions of the plurality of first regions is greater than a number of second regions of the plurality of second regions;
• and
• wherein the plurality of first regions comprises elongated sections that form a narrower part of a first region, and eye-shaped sections that form a wider part of a first region, and wherein the elongated sections of the first regions comprise interruptions, so that each separate first region has one corresponding second region embedded therein, in an eye-shaped section of that first region.