H10D 64/516
The thicknesses being non-uniform
Official title: {the thicknesses being non-uniform}
H10D64/516 (The thicknesses being non-uniform) appears on 3,769 US grants and 4,158 published applications in this corpus.
Search patents in H10D- Granted patents
- 3,769
- Published applications
- 4,158
- Assignees
- 550
- Inventors
- 4,758
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 2 | 0 |
| 1981 | 8 | 0 |
| 1982 | 2 | 0 |
| 1983 | 4 | 0 |
| 1984 | 0 | 0 |
| 1985 | 3 | 0 |
| 1986 | 1 | 0 |
| 1987 | 1 | 0 |
| 1988 | 3 | 0 |
| 1989 | 8 | 0 |
| 1990 | 9 | 0 |
| 1991 | 12 | 0 |
| 1992 | 11 | 0 |
| 1993 | 18 | 0 |
| 1994 | 26 | 0 |
| 1995 | 28 | 0 |
| 1996 | 22 | 0 |
| 1997 | 28 | 0 |
| 1998 | 34 | 0 |
| 1999 | 26 | 0 |
| 2000 | 47 | 0 |
| 2001 | 56 | 32 |
| 2002 | 56 | 88 |
| 2003 | 74 | 85 |
| 2004 | 82 | 97 |
| 2005 | 81 | 106 |
| 2006 | 72 | 149 |
| 2007 | 79 | 129 |
| 2008 | 91 | 154 |
| 2009 | 107 | 166 |
| 2010 | 130 | 169 |
| 2011 | 148 | 152 |
| 2012 | 156 | 189 |
| 2013 | 177 | 196 |
| 2014 | 222 | 246 |
| 2015 | 231 | 249 |
| 2016 | 228 | 232 |
| 2017 | 228 | 189 |
| 2018 | 187 | 177 |
| 2019 | 182 | 189 |
| 2020 | 167 | 169 |
| 2021 | 146 | 168 |
| 2022 | 147 | 204 |
| 2023 | 122 | 155 |
| 2024 | 117 | 148 |
| 2025 | 124 | 165 |
| 2026 | 63 | 155 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Metal-oxide semiconductor field-effect transistor having enhanced high-frequency performance and methods for fabricating same8 Sep 2026US 12,733,201 B2Shanghai Bright Power Semiconductor Co., Ltd.
- Fabrication method for increasing bottom gate oxide thickness of a power transistor and trench gate structure formed by using the same1 Sep 2026US 12,727,232 B2National Yang Ming.Chiao Tung University
- Semiconductor device and manufacturing method thereof8 Oct 2026US 2026/0314027 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Stacked fet with dielectric spacer between gate metal and source/drain contact8 Oct 2026US 2026/0314047 A1International Business Machines Corporation
- Integrated circuit structures having both spine-fet and gaa architectures1 Oct 2026US 2026/0304728 A1Intel Corporation
- Semiconductor structure and method of manufacturing the same1 Oct 2026US 2026/0304751 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Germanium layer for power mosfet1 Oct 2026US 2026/0304827 A1Microchip Technology Incorporated
Most cited
By later US patents
- Power semiconductor devices having improved high frequency switching and breakdown characteristics442US 5,998,833 ANorth Carolina State University · 1999
- Vertical field effect transistors having improved breakdown voltage capability and low on-state resistance374US 5,637,898 ANorth Carolina State University · 1997
- Semiconductor devices exhibiting minimum on-resistance320US 4,941,026 AGeneral Electric Company · 1990
- Power semiconductor devices and methods of manufacture273US 7,345,342 B2Fairchild Semiconductor Corporation · 2008
- Power semiconductor devices having trench-based gate electrodes and field plates232US 6,388,286 B1North Carolina State University · 2002