H10D 64/0126
The sectional shape being asymmetrical
Official title: {the sectional shape being asymmetrical}
H10D64/0126 (The sectional shape being asymmetrical) appears on 87 US grants and 46 published applications in this corpus.
Search patents in H10D- Granted patents
- 87
- Published applications
- 46
- Assignees
- 50
- Inventors
- 196
- Latest grant
- 22 Apr 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1985 | 3 | 0 |
| 1986 | 1 | 0 |
| 1987 | 2 | 0 |
| 1988 | 1 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 5 | 0 |
| 1994 | 6 | 0 |
| 1995 | 6 | 0 |
| 1996 | 5 | 0 |
| 1997 | 6 | 0 |
| 1998 | 2 | 0 |
| 1999 | 4 | 0 |
| 2000 | 2 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 1 |
| 2003 | 2 | 1 |
| 2004 | 0 | 0 |
| 2005 | 1 | 3 |
| 2006 | 1 | 1 |
| 2007 | 2 | 0 |
| 2008 | 1 | 1 |
| 2009 | 1 | 0 |
| 2010 | 2 | 1 |
| 2011 | 0 | 1 |
| 2012 | 0 | 1 |
| 2013 | 5 | 5 |
| 2014 | 3 | 4 |
| 2015 | 4 | 4 |
| 2016 | 1 | 1 |
| 2017 | 5 | 4 |
| 2018 | 1 | 2 |
| 2019 | 5 | 3 |
| 2020 | 3 | 1 |
| 2021 | 1 | 0 |
| 2022 | 1 | 3 |
| 2023 | 2 | 1 |
| 2024 | 1 | 0 |
| 2025 | 1 | 4 |
| 2026 | 0 | 4 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- High-threshold-voltage normally-off high-electron-mobility transistor and preparation method therefor22 Apr 2025US 12,284,818 B2Dalian University of Technology
- Semiconductor device for power amplification10 Dec 2024US 12,166,103 B2Nuvoton Technology Corporation Japan
- Asymmetrical plug technique for GaN devices3 Oct 2023US 11,776,815 B2Power Integrations, Inc.
- Asymmetrically angled gate structure and method for making same20 Jun 2023US 11,682,721 B2Raytheon Company
- Asymmetrical plug technique for GaN devices28 Jun 2022US 11,373,873 B2Power Integrations, Inc.
- Semiconductor structure and manufacturing method thereof11 Jun 2026US 2026/0164747 A1Champ-Asia Semiconductor Corporation
- Method of manufacturing semiconductor device23 Apr 2026US 2026/0114201 A1Taipei Anjet Corporation
- III-Nitride Transistors with Field Plate and Methods of Fabrication5 Feb 2026US 2026/0040648 A1
- Transistors including passivation modulation and related fabrication methods29 Jan 2026US 2026/0033381 A1MACOM Technology Solutions Holdings, Inc.
- Semiconductor device11 Dec 2025US 2025/0380443 A1Win Semiconductors Corp.
Most cited
By later US patents
- Method of manufacturing a field effect transistor device having a multilayer gate electrode104US 4,769,339 AKabushiki Kaisha Toshiba · 1988
- Methods of making high voltage GaN-AlN based semiconductor devices and semiconductor devices made62US 5,990,531 APhilips Electronics N. A. Corporation · 1999
- Fabrication of metal lines for semiconductor devices54US 4,551,905 ACornell Research Foundation, Inc. · 1985
- Heterojunction FET with a high potential barrier layer and gate structure39US 5,399,886 AFujitsu Limited · 1995
- High-speed compound semiconductor device operable at large output power with minimum leakage current34US 6,586,813 B2Fujitsu Quantum Devices Limited · 2003