H10D 64/0124
To group iii-v semiconductors
Official title: {to Group III-V semiconductors}
H10D64/0124 (To group iii-v semiconductors) appears on 768 US grants and 463 published applications in this corpus.
Search patents in H10D- Granted patents
- 768
- Published applications
- 463
- Assignees
- 221
- Inventors
- 1,320
- Latest grant
- 9 Jun 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 5 | 0 |
| 1978 | 2 | 0 |
| 1979 | 3 | 0 |
| 1980 | 3 | 0 |
| 1981 | 5 | 0 |
| 1982 | 7 | 0 |
| 1983 | 5 | 0 |
| 1984 | 4 | 0 |
| 1985 | 8 | 0 |
| 1986 | 5 | 0 |
| 1987 | 10 | 0 |
| 1988 | 12 | 0 |
| 1989 | 14 | 0 |
| 1990 | 19 | 0 |
| 1991 | 12 | 0 |
| 1992 | 16 | 0 |
| 1993 | 19 | 0 |
| 1994 | 23 | 0 |
| 1995 | 29 | 0 |
| 1996 | 25 | 0 |
| 1997 | 30 | 0 |
| 1998 | 19 | 0 |
| 1999 | 39 | 0 |
| 2000 | 26 | 0 |
| 2001 | 21 | 11 |
| 2002 | 14 | 13 |
| 2003 | 16 | 16 |
| 2004 | 15 | 16 |
| 2005 | 10 | 13 |
| 2006 | 9 | 16 |
| 2007 | 7 | 11 |
| 2008 | 12 | 11 |
| 2009 | 8 | 8 |
| 2010 | 10 | 7 |
| 2011 | 15 | 13 |
| 2012 | 4 | 7 |
| 2013 | 11 | 16 |
| 2014 | 16 | 37 |
| 2015 | 34 | 40 |
| 2016 | 36 | 24 |
| 2017 | 29 | 20 |
| 2018 | 19 | 17 |
| 2019 | 19 | 28 |
| 2020 | 18 | 23 |
| 2021 | 24 | 30 |
| 2022 | 14 | 28 |
| 2023 | 29 | 16 |
| 2024 | 22 | 12 |
| 2025 | 13 | 18 |
| 2026 | 1 | 12 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- High band-gap devices with a doped high band-gap gate electrode extension9 Jun 2026US 12,652,843 B2Texas Instruments Incorporated
- High electron mobility transistor with reduced access resistance and method for manufacturing a high electron mobility transistor with reduced access resistance21 Oct 2025US 12,453,113 B2Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- High electron mobility transistor device and manufacturing method thereof7 Oct 2025US 12,439,645 B2Powerchip Semiconductor Manufacturing Corporation
- Field effect transistor with selective channel layer doping26 Aug 2025US 12,402,348 B2Wolfspeed, Inc.
- Plasma-based barrier layer removal method for increasing peak transconductance while maintaining on-state resistance and related devices5 Aug 2025US 12,382,699 B2MACOM Technology Solutions Holdings, Inc.
- Nitride-based semiconductor device and method for manufacturing the same10 Sep 2026US 2026/0271324 A1Innoscience (Suzhou) Semiconductor Co., Ltd.
- Single gate bias power amplifier circuit with tailored threshold transistors and manufacturing methods thereof9 Jul 2026US 2026/0196971 A1Agnit Semiconductors Private Ltd
- Semiconductor structure and manufacturing method thereof11 Jun 2026US 2026/0164747 A1Champ-Asia Semiconductor Corporation
- Group iii-n device including contacts with multiple conductive columns11 Jun 2026US 2026/0164751 A1
- Passivation and High Temperature Oxidation of Iridium Oxide Schottky Contacts for III-Nitride Devices30 Apr 2026US 2026/0123000 A1The Board of Trustees of the Leland Stanford Junior University
Most cited
By later US patents
- Vertical insulated gate transistor and method of manufacture188US 5,473,176 AKabushiki Kaisha Toshiba · 1995
- Field effect transistor with nitride compound159US 5,929,467 ASony Corporation · 1999
- Gallium nitride material devices including an electrode-defining layer and methods of forming the same135US 7,071,498 B2Nitronex Corporation · 2006
- Double recessed transistor131US 6,797,994 B1Raytheon Company · 2004
- Advanced RF enhancement-mode FETs with improved gate properties122US 6,893,947 B2Freescale Semiconductor, Inc. · 2005