H10D 64/012
Of electrodes comprising a schottky barrier to a semiconductor
Official title: {of electrodes comprising a Schottky barrier to a semiconductor}
H10D64/012 (Of electrodes comprising a schottky barrier to a semiconductor) appears on 1,163 US grants and 815 published applications in this corpus.
Search patents in H10D- Granted patents
- 1,163
- Published applications
- 815
- Assignees
- 351
- Inventors
- 2,024
- Latest grant
- 4 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 7 | 0 |
| 1977 | 6 | 0 |
| 1978 | 5 | 0 |
| 1979 | 6 | 0 |
| 1980 | 9 | 0 |
| 1981 | 7 | 0 |
| 1982 | 12 | 0 |
| 1983 | 13 | 0 |
| 1984 | 7 | 0 |
| 1985 | 12 | 0 |
| 1986 | 7 | 0 |
| 1987 | 16 | 0 |
| 1988 | 17 | 0 |
| 1989 | 19 | 0 |
| 1990 | 20 | 0 |
| 1991 | 14 | 0 |
| 1992 | 18 | 0 |
| 1993 | 20 | 0 |
| 1994 | 25 | 0 |
| 1995 | 31 | 0 |
| 1996 | 31 | 0 |
| 1997 | 31 | 0 |
| 1998 | 23 | 0 |
| 1999 | 46 | 0 |
| 2000 | 31 | 0 |
| 2001 | 27 | 13 |
| 2002 | 19 | 20 |
| 2003 | 19 | 19 |
| 2004 | 20 | 21 |
| 2005 | 14 | 18 |
| 2006 | 11 | 27 |
| 2007 | 11 | 17 |
| 2008 | 18 | 19 |
| 2009 | 14 | 19 |
| 2010 | 15 | 18 |
| 2011 | 25 | 30 |
| 2012 | 13 | 15 |
| 2013 | 25 | 31 |
| 2014 | 30 | 52 |
| 2015 | 54 | 68 |
| 2016 | 60 | 53 |
| 2017 | 53 | 42 |
| 2018 | 42 | 39 |
| 2019 | 39 | 53 |
| 2020 | 44 | 40 |
| 2021 | 38 | 47 |
| 2022 | 27 | 42 |
| 2023 | 42 | 35 |
| 2024 | 29 | 26 |
| 2025 | 31 | 32 |
| 2026 | 10 | 19 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Method for creating an ohmic contact on a high-power electrical diode4 Aug 2026US 12,701,764 B2STMicroelectronics International N. V.
- Forming an electronic device, such as a JBS or MPS diode, based on 3C-SiC, and 3C-SiC electronic device9 Jun 2026US 12,652,812 B2STMicroelectronics S,r.l.
- High band-gap devices with a doped high band-gap gate electrode extension9 Jun 2026US 12,652,843 B2Texas Instruments Incorporated
- Front side OHMIC contact formation for SiC device19 May 2026US 12,635,202 B2STMicroelectronics International N. V.
- Diode with contact structure including an improved barrier region and related manufacturing process5 May 2026US 12,622,040 B2STMicroelectronics S,r.l.
- Nitride-based semiconductor device and method for manufacturing the same10 Sep 2026US 2026/0271324 A1Innoscience (Suzhou) Semiconductor Co., Ltd.
- High performance schottky barrier diode23 Jul 2026US 2026/0214921 A1Microchip Technology Incorporated
- High performance schottky barrier diode structure23 Jul 2026US 2026/0214961 A1Microchip Technology Incorporated
- Single gate bias power amplifier circuit with tailored threshold transistors and manufacturing methods thereof9 Jul 2026US 2026/0196971 A1Agnit Semiconductors Private Ltd
- Germanium-rich metal contact layers for pmos source and drain contacts2 Jul 2026US 2026/0190430 A1Intel Corporation
Most cited
By later US patents
- Vertical insulated gate transistor and method of manufacture188US 5,473,176 AKabushiki Kaisha Toshiba · 1995
- Field effect transistor with nitride compound159US 5,929,467 ASony Corporation · 1999
- Gallium nitride material devices including an electrode-defining layer and methods of forming the same135US 7,071,498 B2Nitronex Corporation · 2006
- Double recessed transistor131US 6,797,994 B1Raytheon Company · 2004
- Advanced RF enhancement-mode FETs with improved gate properties122US 6,893,947 B2Freescale Semiconductor, Inc. · 2005