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US 12,622,040 B2Granted
Diode with contact structure including an improved barrier region and related manufacturing process
AssigneeSTMicroelectronics S.r.l.
InventorsEttore Chiacchio, Ignazio Bertuglia
Life of this patent
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Abstract
The present disclosure is directed to a diode with a semiconductor body of silicon including a cathode region, which has a first conductivity type and is delimited by a front surface; and an anode region, which has a second conductivity type and extends into the cathode region from the front surface. The diode further includes a barrier region of cobalt disilicide, arranged on the anode region; and a metallization region of aluminum or of an aluminum alloy, arranged on the barrier region. The barrier region contacts the anode region.
Claims13
A diode comprising:
- a semiconductor body;
- a cathode region in the semiconductor body and delimited by a front surface of the semiconductor body, the cathode region having a first conductivity type;
- an anode region in the semiconductor body and extending into the cathode region from the front surface, the anode region having a second conductivity type, the anode region including an inner portion and a peripheral portion;
- a field oxide region on the semiconductor body and on the peripheral portion of the anode region;
- a front dielectric region on the field oxide region;
- a first opening in the field oxide region and the front dielectric region, the first opening overlying the inner portion of the anode region;
- a barrier region including cobalt disilicide, the barrier region extending in the first opening, in direct contact with the inner portion of the anode region;
- and
- a metallization region including aluminum, arranged on the barrier region.
6 more elements
A device, comprising:
- a semiconductor substrate;
- a cathode region in the semiconductor substrate;
- an anode region in the cathode region;
- a barrier region on the anode region;
- a first dielectric layer on the semiconductor substrate, the first dielectric layer having a first opening overlying the barrier region;
- a second dielectric layer on the first dielectric layer, the second dielectric layer having a second opening overlying the first opening;
- a first metallization structure on a first side of the semiconductor substrate;
- and
- a second metallization structure on a second side, opposite to the first side, of the semiconductor substrate, on the second dielectric layer, and in the second opening, the second metallization structure including aluminum.
6 more elements
A diode comprising:
- a semiconductor body;
- a cathode region in the semiconductor body and delimited by a front surface of the semiconductor body, the cathode region having a first conductivity type;
- an anode region in the semiconductor body and extending into the cathode region from the front surface, the anode region having a second conductivity type, the anode region including an inner portion, a peripheral portion, and an enriched anode region extending into the inner portion, the enriched anode region having a doping level that is greater than a doping level of the inner portion and the peripheral portion;
- a field oxide region on the peripheral portion;
- a front dielectric region on the field oxide region;
- and
- a first opening in the field oxide region and the front dielectric region, and overlying the enriched anode region, and
- a barrier region including cobalt disilicide, extending inside the first opening, on the enriched anode region;
- and
- a metallization region including aluminum, arranged on the barrier region.
7 more elements
Dependencies are inferred from the claim text.