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US 2026/0214921 A1Published application
High performance schottky barrier diode
AssigneeMicrochip Technology Incorporated
InventorsShesh Mani Pandey, Randy L. Yach
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Abstract
A Schottky barrier diode (SBD) includes a volume of semiconductor material, a plurality of laterally spaced pockets of doped material, and a silicon layer. The volume of semiconductor material presents opposite first and second ends. The plurality of laterally spaced pockets of doped material extend into the volume of semiconductor material adjacent the first end. The silicon layer is located adjacent the first end between the pockets of doped material.
Claims20
A Schottky barrier diode (SBD), comprising:
- a volume of semiconductor material presenting opposite first and second ends;
- a plurality of laterally spaced pockets of doped material extending into the volume of semiconductor material adjacent the first end;
- and
- a silicon layer located adjacent the first end between the pockets of doped material.
1 more element
A method of making a Schottky barrier diode (SBD), comprising:
- growing a volume of semiconductor material on a cathode substrate, the volume of semiconductor material presenting a first end and a second end opposite the first end;
- implanting a silicon layer adjacent the first end;
- implanting a plurality of laterally spaced pockets of doped material adjacent the first end, the silicon layer extending between the pockets of doped material;
- and
- placing a Schottky metal at the first end and of the volume of semiconductor material adjacent the silicon layer and the pockets of doped material.
2 more elements
Dependencies are inferred from the claim text.