H10D 64/0121
To group iv semiconductors
Official title: {to Group IV semiconductors}
H10D64/0121 (To group iv semiconductors) appears on 421 US grants and 369 published applications in this corpus.
Search patents in H10D- Granted patents
- 421
- Published applications
- 369
- Assignees
- 190
- Inventors
- 812
- Latest grant
- 4 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 6 | 0 |
| 1977 | 3 | 0 |
| 1978 | 4 | 0 |
| 1979 | 4 | 0 |
| 1980 | 6 | 0 |
| 1981 | 2 | 0 |
| 1982 | 6 | 0 |
| 1983 | 8 | 0 |
| 1984 | 4 | 0 |
| 1985 | 4 | 0 |
| 1986 | 2 | 0 |
| 1987 | 6 | 0 |
| 1988 | 5 | 0 |
| 1989 | 5 | 0 |
| 1990 | 1 | 0 |
| 1991 | 3 | 0 |
| 1992 | 3 | 0 |
| 1993 | 2 | 0 |
| 1994 | 2 | 0 |
| 1995 | 2 | 0 |
| 1996 | 6 | 0 |
| 1997 | 1 | 0 |
| 1998 | 4 | 0 |
| 1999 | 7 | 0 |
| 2000 | 5 | 0 |
| 2001 | 6 | 2 |
| 2002 | 6 | 7 |
| 2003 | 3 | 3 |
| 2004 | 5 | 5 |
| 2005 | 4 | 5 |
| 2006 | 2 | 11 |
| 2007 | 4 | 7 |
| 2008 | 6 | 8 |
| 2009 | 6 | 11 |
| 2010 | 5 | 11 |
| 2011 | 10 | 17 |
| 2012 | 9 | 8 |
| 2013 | 14 | 16 |
| 2014 | 14 | 17 |
| 2015 | 22 | 31 |
| 2016 | 26 | 33 |
| 2017 | 27 | 24 |
| 2018 | 26 | 23 |
| 2019 | 21 | 26 |
| 2020 | 27 | 17 |
| 2021 | 15 | 17 |
| 2022 | 13 | 15 |
| 2023 | 15 | 21 |
| 2024 | 7 | 14 |
| 2025 | 18 | 14 |
| 2026 | 9 | 6 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Method for creating an ohmic contact on a high-power electrical diode4 Aug 2026US 12,701,764 B2STMicroelectronics International N. V.
- Forming an electronic device, such as a JBS or MPS diode, based on 3C-SiC, and 3C-SiC electronic device9 Jun 2026US 12,652,812 B2STMicroelectronics S,r.l.
- Front side OHMIC contact formation for SiC device19 May 2026US 12,635,202 B2STMicroelectronics International N. V.
- Diode with contact structure including an improved barrier region and related manufacturing process5 May 2026US 12,622,040 B2STMicroelectronics S,r.l.
- Termination structures for semiconductor devices21 Apr 2026US 12,610,764 B2Virginia Tech Intellectual Properties, Inc.
- High performance schottky barrier diode23 Jul 2026US 2026/0214921 A1Microchip Technology Incorporated
- High performance schottky barrier diode structure23 Jul 2026US 2026/0214961 A1Microchip Technology Incorporated
- Germanium-rich metal contact layers for pmos source and drain contacts2 Jul 2026US 2026/0190430 A1Intel Corporation
- Semiconductor device19 Mar 2026US 2026/0082659 A1Rohm Co., Ltd.
- Electronic device with improved reliability5 Feb 2026US 2026/0040994 A1STMicroelectronics International N. V.
Most cited
By later US patents
- Method for forming an ohmic electrode120US 6,110,813 AMatsushita Electric Industrial Co., Ltd. · 2000
- Method for fabricating tantalum semiconductor contacts113US 4,215,156 AInternational Business Machines Corporation · 1980
- Method of fabricating metal-semiconductor interfaces96US 4,056,642 AData General Corporation · 1977
- Method of fabricating MOS field effect transistors91US 4,324,038 ABell Telephone Laboratories, Incorporated · 1982
- Fabrication of schottky-barrier MOS FETs88US 4,485,550 AAT&T Bell Laboratories · 1984