Method of fabricating metal-semiconductor interfaces
AssigneeData General Corporation
InventorsArjun N. Saxena, Courtney Hart
Life of this patent
Estimating the term…
Abstract
An improved method of fabricating metal-semiconductor interfaces such as Schottky barriers and ohmic contacts. There is disclosed apparatus and method (or process) for chemically converting, etching, or passivating the surface of a material, such as the surface of a silicon wafer, in a gaseous plasma environment consisting of atomic, neutral nitrogen which causes the surface of the material to be resistant to otherwise subsequent nascent surface oxide buildup. This process is particularly useful in manufacture of Schottky diodes, transistors, and other electronic components or discrete and integrated devices requiring high quality metal-semiconductor junctions or interfaces.
Claims4
A process for fabricating metal-semiconductor interface comprising the steps of:
- a. producing an oxidized semiconductor wafer with photo-resisted areas;
- b. subjecting the surface of said semiconductor wafer to a neutral, atomic, nitrogen plasma to break nascent oxide from said surface and to passivate said surface to make said surface resistant to nascent oxide buildup;
- and
- c. depositing said metal on said semiconductur wafer to obtain said metal-semiconductor interface.
Dependencies are inferred from the claim text.