H10D 64/0123
To silicon carbide
Official title: {to silicon carbide}
H10D64/0123 (To silicon carbide) appears on 188 US grants and 209 published applications in this corpus.
Search patents in H10D- Granted patents
- 188
- Published applications
- 209
- Assignees
- 86
- Inventors
- 378
- Latest grant
- 4 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1992 | 1 | 0 |
| 1993 | 1 | 0 |
| 1994 | 0 | 0 |
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 3 | 0 |
| 2000 | 3 | 0 |
| 2001 | 4 | 1 |
| 2002 | 3 | 6 |
| 2003 | 2 | 0 |
| 2004 | 2 | 2 |
| 2005 | 3 | 3 |
| 2006 | 0 | 3 |
| 2007 | 3 | 3 |
| 2008 | 3 | 3 |
| 2009 | 2 | 6 |
| 2010 | 2 | 4 |
| 2011 | 4 | 9 |
| 2012 | 2 | 5 |
| 2013 | 9 | 9 |
| 2014 | 6 | 9 |
| 2015 | 13 | 19 |
| 2016 | 16 | 22 |
| 2017 | 17 | 13 |
| 2018 | 14 | 14 |
| 2019 | 15 | 19 |
| 2020 | 19 | 8 |
| 2021 | 6 | 11 |
| 2022 | 6 | 7 |
| 2023 | 8 | 14 |
| 2024 | 3 | 8 |
| 2025 | 11 | 9 |
| 2026 | 6 | 2 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method for creating an ohmic contact on a high-power electrical diode4 Aug 2026US 12,701,764 B2STMicroelectronics International N. V.
- Forming an electronic device, such as a JBS or MPS diode, based on 3C-SiC, and 3C-SiC electronic device9 Jun 2026US 12,652,812 B2STMicroelectronics S,r.l.
- Front side OHMIC contact formation for SiC device19 May 2026US 12,635,202 B2STMicroelectronics International N. V.
- MPS diode device and preparation method therefor3 Mar 2026US 12,568,636 B2Gree Electric Appliances, Inc. of Zhuhai
- Semiconductor device having a junction portion contacting a Schottky metal3 Feb 2026US 12,543,360 B2Rohm Co., Ltd.
- Semiconductor device19 Mar 2026US 2026/0082659 A1Rohm Co., Ltd.
- Electronic device with improved reliability5 Feb 2026US 2026/0040994 A1STMicroelectronics International N. V.
- Semiconductor device6 Nov 2025US 2025/0344480 A1Rohm Co., Ltd.
- Silicon carbide semiconductor device and method of manufacturing the same16 Oct 2025US 2025/0324741 A1Fuji Electric Co., Ltd.
- Semiconductor device11 Sep 2025US 2025/0287622 A1Silanna UV Technologies Pte Ltd
Most cited
By later US patents
- Method for forming an ohmic electrode120US 6,110,813 AMatsushita Electric Industrial Co., Ltd. · 2000
- Method for forming ohmic electrode, and semiconductor device84US 6,274,889 B1Matsushita Electric Industrial Co., Ltd. · 2001
- Semiconductor device made from silicon carbide with a Schottky contact and an ohmic contact made from a nickel-aluminum material70US 6,936,850 B2SiCED Electronics Development GmbH & Co. KG · 2005
- Process for producing an electrical contact on a SIC surface61US 6,139,624 ASiemens Aktiengesellschaft · 2000
- Silicon carbide transistor and method56US 5,885,860 AMotorola, Inc. · 1999