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US 6,139,624 AGranted
Process for producing an electrical contact on a SIC surface
AssigneeSiemens Aktiengesellschaft
InventorRoland Rupp
Life of this patent
Estimating the term…
Abstract
Method for producing an electrical contact on a SiC surface A carbon coating (4), preferably a graphite coating, is first created on the silicon carbide surface (3). Said carbon coating (4) is then converted, with a carbide-forming metal (Me), into a metal carbide coating (7). The SiC/metal carbide contact produced thereby forms, in particular, an almost perfect Schottky contact.
Claims24
A method for producing an electrical contact on a silicon carbide surface (3), comprising the steps of:
- a) producing by epitaxial deposition a SiC crystal (2) having said silicon carbide surface (3);
- b) producing a carbon coating (4) on said silicon carbide surface (3) by interrupting silicon delivery during said epitaxial deposition and by delivering only carbon;
- and
- c) converting the carbon coating (4) at least largely into metal carbide with at least one carbide-forming metal.
1 more element
A method for producing an electrical contact on a silicon surface (3), comprising the steps of:
- a) producing a SiC crystal (2) by epitaxial deposition at a temperature between approximately 1000.degree. C. and approximately 1800.degree. C. said SiC single crystal (2) having said silicon carbide surface (3), immediately followed by
- b) cooling the SiC single crystal (2) in vacuum or in an inert gas atmosphere, wherein the carbon coating (4) is produced by evaporating silicon atoms off from said silicon carbide surface (3), and
- c) converting the carbon coating (4) at least largely into metal carbide with at least one carbide-forming metal.
Dependencies are inferred from the claim text.