Semiconductor device
AssigneeRohm Co., Ltd.
InventorsTakaaki YAMANAKA, Yuki NAKANO, Kenji YAMAMOTO
Life of this patent
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Abstract
A semiconductor device includes a chip, an electrode that is formed on the chip, an inorganic insulating layer that covers the electrode and has a first opening exposing the electrode, an organic insulating layer that covers the inorganic insulating layer, has a second opening surrounding the first opening at an interval from the first opening, and exposes an inner peripheral edge of the inorganic insulating layer in a region between the first opening and the second opening, and an Ni plating layer that covers the electrode inside the first opening and covers the inner peripheral edge of the inorganic insulating layer inside the second opening.
Claims16
A semiconductor device comprising:
- a chip that has a side surface;
- an electrode that is formed on the chip;
- an inorganic insulating layer that covers the electrode, and that exposes the electrode from a first opening;
- a organic insulating layer that covers the inorganic insulating layer, that has a second opening having an opening end which is formed at an interval from an opening end of the first opening, and that exposes an inner peripheral edge of the inorganic insulating in a region between the first opening and the second opening;
- and
- an Ni plating layer that covers the electrode inside the first opening, and that covers the inner peripheral edge of the inorganic insulating layer inside the second opening, wherein
- the organic insulating layer has a second outer wall positioned more inward than a first outer wall of the inorganic insulating layer, and
- the second outer wall is formed along a cutting line at an interval inward from the side surface.
Dependencies are inferred from the claim text.