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US 12,543,360 B2Granted
Semiconductor device having a junction portion contacting a Schottky metal
AssigneeRohm Co., Ltd.
InventorYasuhiro Kawakami
Life of this patent
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Abstract
A semiconductor device according to the present invention includes a first conductive-type Sic semiconductor layer, and a Schottky metal, comprising molybdenum and having a thickness of 10 nm to 150 nm, that contacts the surface of the SiC semiconductor layer. The junction of the SiC semiconductor layer to the Schottky metal has a planar structure, or a structure with recesses and protrusions of equal to or less than 5 nm.
Claims24
A semiconductor device, comprising:
- a first conductive-type SiC semiconductor layer having a front surface and a rear surface;
- an anode electrode having a multi-layered structure being in contact with the front surface of the SiC semiconductor layer;
- and
- a cathode electrode formed on the rear surface of the SiC semiconductor layer,
- wherein a Schottky junction is formed between the anode electrode and the front surface of the SiC semiconductor layer,
- fine recesses are formed in a junction portion of the SiC semiconductor layer to the anode electrode,
- a part of the anode electrode is embedded in the fine recesses, and
- the multi-layered structure includes a first layer, a second layer on the first layer, and a third layer on the second layer.
5 more elements
A semiconductor device, comprising:
- a first conductive-type SiC semiconductor layer having a front surface and a rear surface;
- an anode electrode having a multi-layered structure being in contact with the front surface of the SiC semiconductor layer;
- a surface protection film covering a peripheral portion of the anode electrode and a part of the front surface of the SiC semiconductor layer;
- and
- a cathode electrode formed on the rear surface of the SiC semiconductor layer,
- wherein a Schottky junction is formed between the anode electrode and the front surface of the SiC semiconductor layer to the anode electrode,
- fine recesses are formed in a junction portion of the SiC semiconductor layer,
- a part of the anode electrode is embedded in the fine recesses, and
- the multi-layered structure includes a first layer, a second layer on the first layer, and a third layer on the second layer.
6 more elements
Dependencies are inferred from the claim text.