Semiconductor structure and manufacturing method thereof

Abstract

A semiconductor structure and a manufacturing method are provided. The semiconductor structure comprises a substrate, a channel layer, an electrode, and a multilayer field plate. The channel layer is disposed above the substrate. The electrode is disposed above the channel layer. The multilayer field plate is electrically connected to the electrode and includes at least a first field plate and a second field plate. The first field plate partially overlaps and connects with the electrode. The second field plate partially overlaps and connects with the first field plate. The electrode and the multilayer field plate are configured to collectively form a continuous stepped structure. The term of partially overlapping and connecting refers to a configuration of partially direct physical contact and connection without any intervening structures.

Dependencies are inferred from the claim text.