Asymmetrically angled gate structure and method for making same

A method for making a transistor, comprising the steps of:

• applying a layer of photoresist to a substrate coated with ohmic material defining a source and a drain;
• removing portions of the photoresist to define a central space between a first strip of photoresist and a second strip of photoresist, wherein the first strip and the second strip have different widths;
• reflowing the photoresist to create reflow angles on either side of the central space;
• applying a gate metal to the central space;
• removing the layer of photoresist to produce the transistor having the source, the drain and a gate having a stem contacting the substrate, the stem having a source side surface and a drain side surface, wherein the source side surface and the drain side surface are defined by non-linear surfaces, and wherein a source side angle is defined between the source side surface and an upper planar surface of the substrate and a drain side angle is defined between the drain side surface and the upper planar surface of the substrate, and wherein the source side angle and the drain side angle are asymmetric, wherein the source side surface is entirely concave toward the source, and the drain side surface is entirely concave toward the drain, wherein the non-linear surfaces are non-linear from a point of contact with the upper planar surface of the substrate, and wherein the source side surface terminates at a first point a first distance above the upper planar surface of the substrate and the drain side surface terminates at a second point a second distance above the upper planar surface of the substrate, wherein the first distance is different from the second distance.