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US 6,586,813 B2Granted
High-speed compound semiconductor device operable at large output power with minimum leakage current
AssigneeFujitsu Quantum Devices Limited
InventorMasaki Nagahara
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Abstract
A compound semiconductor device includes a cap layer formed on a channel layer and an insulating film formed on the cap layer, and a Γ-shaped gate electrode is provided in a gate recess opening, wherein an extension part of the Γ-shaped gate electrode extends over the insulating film toward a drain electrode, and the total thickness of the insulating film and the cap layer being is set such that the electric field formed right underneath the extension part of the gate electrode includes a component acting in a direction perpendicular to the substrate.
Claims10
A compound semiconductor device, comprising:
- a substrate;
- a channel layer formed on said substrate;
- a cap layer formed on said channel layer;
- an insulating film formed on said cap layer;
- a gate recess opening penetrating through said insulating film and said cap layer;
- an n-type source region extending from a surface of said cap layer and reaching said channel layer at a first side of a gate electrode;
- an n-type drain region extending from a surface of said cap layer and reaching said channel layer at a second side of said gate electrode;
- a source electrode contacting with said source region electrically;
- and
- a drain electrode contacting with said drain region electrically,
- said gate electrode having a Γ shape and extending over said insulating film from said gate recess opening in a direction of said second side,
- a total thickness of said insulating film and said cap layer being set such that there is formed an electric field right underneath an extending part of said gate electrode such that said electric field has a component acting in a direction perpendicular to a principal surface of said substrate with a magnitude commensurate with a magnitude of an electric field component acting parallel to said principal surface in a part of said channel layer located right underneath said extending part of said gate electrode.
9 more elements
Dependencies are inferred from the claim text.