H10D 62/854
Further characterised by the dopants
Official title: further characterised by the dopants
H10D62/854 (Further characterised by the dopants) appears on 808 US grants and 948 published applications in this corpus.
Search patents in H10D- Granted patents
- 808
- Published applications
- 948
- Assignees
- 267
- Inventors
- 1,517
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 3 | 0 |
| 1978 | 0 | 0 |
| 1979 | 3 | 0 |
| 1980 | 3 | 0 |
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 3 | 0 |
| 1984 | 1 | 0 |
| 1985 | 1 | 0 |
| 1986 | 3 | 0 |
| 1987 | 5 | 0 |
| 1988 | 3 | 0 |
| 1989 | 5 | 0 |
| 1990 | 1 | 0 |
| 1991 | 7 | 0 |
| 1992 | 10 | 0 |
| 1993 | 9 | 0 |
| 1994 | 6 | 0 |
| 1995 | 5 | 0 |
| 1996 | 2 | 0 |
| 1997 | 2 | 0 |
| 1998 | 5 | 0 |
| 1999 | 2 | 0 |
| 2000 | 2 | 0 |
| 2001 | 2 | 2 |
| 2002 | 6 | 11 |
| 2003 | 3 | 8 |
| 2004 | 8 | 9 |
| 2005 | 4 | 9 |
| 2006 | 4 | 18 |
| 2007 | 11 | 16 |
| 2008 | 5 | 7 |
| 2009 | 15 | 12 |
| 2010 | 12 | 24 |
| 2011 | 11 | 9 |
| 2012 | 12 | 25 |
| 2013 | 14 | 38 |
| 2014 | 31 | 50 |
| 2015 | 54 | 81 |
| 2016 | 64 | 81 |
| 2017 | 68 | 80 |
| 2018 | 63 | 67 |
| 2019 | 64 | 55 |
| 2020 | 52 | 64 |
| 2021 | 48 | 62 |
| 2022 | 44 | 51 |
| 2023 | 36 | 50 |
| 2024 | 40 | 55 |
| 2025 | 34 | 39 |
| 2026 | 21 | 25 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Nitride semiconductor and semiconductor device6 Oct 2026US 12,757,462 B2Kabushiki Kaisha Toshiba
- Nitride semiconductor device6 Oct 2026US 12,757,465 B2Panasonic Holdings Corporation
- Multilayered substrate21 Jul 2026US 12,690,240 B2Sumitomo Chemical Company, Limited
- Electronic component based on p-doped gallium nitride7 Jul 2026US 12,677,436 B2Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Semiconductor device and wireless communication device9 Jun 2026US 12,652,818 B2Sony Group Corporation
- Bonded substrate, semiconductor device, and method of producing bonded substrate24 Sep 2026US 2026/0293255 A1NGK Insulators, Ltd.
- Hemt transistor27 Aug 2026US 2026/0255659 A1STMicroelectronics International N. V.
- Electronic device with enhancement mode gallium nitride transistor, and method of making same6 Aug 2026US 2026/0231463 A1
- Horizontal transport gaa tunnel fets18 Jun 2026US 2026/0173436 A1International Business Machines Corporation
- Semiconductor device11 Jun 2026US 2026/0164694 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Nanosensors247US 7,129,554 B2President and Fellows of Harvard College · 2006
- Fabrication of single or multiple gate field plates107US 7,812,369 B2The Regents of the University of California · 2010
- Robust transistors with fluorine treatment100US 7,638,818 B2Cree, Inc. · 2009
- Nanoscale wires and related devices98US 7,301,199 B2President and Fellows of Harvard College · 2007
- Nitride heterojunction transistors having charge-transfer induced energy barriers and methods of fabricating the same97US 7,170,111 B2Cree, Inc. · 2007