Electronic component based on p-doped gallium nitride

An electronic component comprising:

• a substrate
• a plurality of active stacks, each active stack being formed above the substrate and including:
• a layer of p-type doped Gallium Nitride GaN disposed above the substrate;
• a layer of a semiconductor material disposed on the layer of p-type doped Gallium Nitride GaN;
• wherein the electronic component includes two side zones located on either side of the respective p-type doped GaN layer of each active stack, the two side zones being oxygen-implanted,
• wherein each active stack includes:
• an n-type doped GaN layer disposed on the p-type doped GaN layer;
• an unintentionally doped GaN layer disposed on the n-type doped GaN layer;
• and
• a semiconductor layer disposed on the unintentionally doped GaN layer to form a two-dimensional electron gas;
• the component further including a source zone, a drain zone and a control gate zone formed on or in the semiconductor layer to form a two-dimensional electron gas;
• the two oxygen-implanted side zones also extending on either side of the n-type doped GaN layer, of the unintentionally doped GaN layer and of the semiconductor layer to form a two-dimensional electron gas.

A method for manufacturing an electronic component including

• a substrate
• a plurality of active stacks, each active stack being formed above the substrate and including:
• a layer of p-type doped Gallium Nitride GaN disposed above the substrate;
• a layer of a semiconductor material disposed on the layer of p-type doped Gallium Nitride GaN;
• wherein the electronic component includes two side zones located on either side of the respective p-type doped GaN layer of each active stack, the two side zones being oxygen-implanted, the method comprising:
• making on the substrate the plurality of active stacks formed above the substrate, each active stack including:
• the layer of p-type doped Gallium Nitride GaN, disposed above the substrate;
• the layer of a semiconductor material disposed on the p-type doped Gallium Nitride GaN layer;
• making a mask above the plurality of stacks, said mask masking each active stack;
• ion implantation to introduce oxygen atoms into the two zones of each active stack located on either side of the masked zone so as to obtain two oxygen-implanted side zones in the p-type doped Gallium Nitride GaN layer;
• annealing following ion implantation,
• wherein a dose of oxygen atoms implanted is:
• greater than 2·1014 cm−2×(Wa/Wo) where Wa denotes a width of the active stack and Wo denotes a width of the implanted side zones and;
• less than 6·1015 cm−2×(Wa/Wo),
• the width being measured parallel to the plane of the layers in line with each active stack and the oxygen-implanted zones.