H10D 62/85
Being group iii-v materials
Official title: being Group III-V materials, e.g. GaAs
H10D62/85 (Being group iii-v materials) appears on 10,226 US grants and 12,288 published applications in this corpus.
Search patents in H10D- Granted patents
- 10,226
- Published applications
- 12,288
- Assignees
- 1,406
- Inventors
- 11,174
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 5 | 0 |
| 1977 | 9 | 0 |
| 1978 | 10 | 0 |
| 1979 | 12 | 0 |
| 1980 | 15 | 0 |
| 1981 | 9 | 0 |
| 1982 | 8 | 0 |
| 1983 | 9 | 0 |
| 1984 | 8 | 0 |
| 1985 | 9 | 0 |
| 1986 | 18 | 0 |
| 1987 | 16 | 0 |
| 1988 | 28 | 0 |
| 1989 | 35 | 0 |
| 1990 | 31 | 0 |
| 1991 | 52 | 0 |
| 1992 | 51 | 0 |
| 1993 | 45 | 0 |
| 1994 | 48 | 0 |
| 1995 | 51 | 0 |
| 1996 | 42 | 0 |
| 1997 | 56 | 0 |
| 1998 | 49 | 0 |
| 1999 | 58 | 0 |
| 2000 | 45 | 0 |
| 2001 | 49 | 28 |
| 2002 | 61 | 80 |
| 2003 | 69 | 117 |
| 2004 | 91 | 134 |
| 2005 | 93 | 168 |
| 2006 | 96 | 216 |
| 2007 | 104 | 206 |
| 2008 | 114 | 223 |
| 2009 | 141 | 229 |
| 2010 | 195 | 296 |
| 2011 | 209 | 359 |
| 2012 | 244 | 404 |
| 2013 | 366 | 642 |
| 2014 | 534 | 746 |
| 2015 | 709 | 841 |
| 2016 | 785 | 805 |
| 2017 | 802 | 850 |
| 2018 | 687 | 663 |
| 2019 | 692 | 678 |
| 2020 | 638 | 725 |
| 2021 | 514 | 617 |
| 2022 | 481 | 726 |
| 2023 | 446 | 695 |
| 2024 | 553 | 765 |
| 2025 | 536 | 653 |
| 2026 | 298 | 422 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Indium phosphide substrate, method for manufacturing indium phosphide substrate, and semiconductor epitaxial wafer6 Oct 2026US 12,753,529 B2JX Advanced Metals Corporation
- Half-bridge circuit using monolithic flip-chip GAN power devices6 Oct 2026US 12,756,203 B2Navitas Semiconductor Limited
- Schottky barrier diode6 Oct 2026US 12,757,419 B2Novel Crystal Technology, Inc.
- Nitride-based bidirectional switching device and method for manufacturing the same6 Oct 2026US 12,757,426 B2Innoscience (Suzhou) Semiconductor Co., Ltd.
- High electron mobility transistor with helping gate6 Oct 2026US 12,757,447 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Carrier structure for etch-back silicon-on-insulator process8 Oct 2026US 2026/0313929 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure and method of manufacture8 Oct 2026US 2026/0313943 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Wide bandgap material in drift well of semiconductor device8 Oct 2026US 2026/0313993 A1
- Semiconductor device and method of making8 Oct 2026US 2026/0314015 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Seal ring structure8 Oct 2026US 2026/0314416 A1GLOBALFOUNDRIES U. S. Inc.
Most cited
By later US patents
- High-electron mobility transistor with zinc oxide3,938US 7,105,868 B2Cermet, Inc. · 2006
- Vertical gate all around (VGAA) transistors and methods of forming the same1,029US 9,502,265 B1Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Nanowire field effect transistor device having a replacement gate849US 9,472,618 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Semiconductor device having an MIS structure558US 5,616,947 AMatsushita Electric Industrial Co., Ltd. · 1997
- Film forming method, semiconductor device, manufacturing method thereof and substrate processing apparatus therefor470US 8,785,311 B2Tokyo Electron Limited · 2014