H10D 62/8503
Nitride group iii-v materials
Official title: {Nitride Group III-V materials, e.g. AlN or GaN}
H10D62/8503 (Nitride group iii-v materials) appears on 7,665 US grants and 10,261 published applications in this corpus.
Search patents in H10D- Granted patents
- 7,665
- Published applications
- 10,261
- Assignees
- 1,078
- Inventors
- 8,111
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1991 | 1 | 0 |
| 1992 | 0 | 0 |
| 1993 | 2 | 0 |
| 1994 | 2 | 0 |
| 1995 | 1 | 0 |
| 1996 | 1 | 0 |
| 1997 | 4 | 0 |
| 1998 | 2 | 0 |
| 1999 | 8 | 0 |
| 2000 | 9 | 0 |
| 2001 | 12 | 13 |
| 2002 | 17 | 42 |
| 2003 | 36 | 61 |
| 2004 | 40 | 79 |
| 2005 | 49 | 130 |
| 2006 | 65 | 166 |
| 2007 | 76 | 165 |
| 2008 | 89 | 179 |
| 2009 | 109 | 195 |
| 2010 | 159 | 248 |
| 2011 | 171 | 302 |
| 2012 | 193 | 351 |
| 2013 | 328 | 559 |
| 2014 | 469 | 648 |
| 2015 | 596 | 668 |
| 2016 | 609 | 609 |
| 2017 | 587 | 648 |
| 2018 | 521 | 518 |
| 2019 | 534 | 553 |
| 2020 | 523 | 576 |
| 2021 | 406 | 529 |
| 2022 | 394 | 654 |
| 2023 | 386 | 637 |
| 2024 | 491 | 720 |
| 2025 | 491 | 614 |
| 2026 | 284 | 397 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Half-bridge circuit using monolithic flip-chip GAN power devices6 Oct 2026US 12,756,203 B2Navitas Semiconductor Limited
- Nitride-based bidirectional switching device and method for manufacturing the same6 Oct 2026US 12,757,426 B2Innoscience (Suzhou) Semiconductor Co., Ltd.
- High electron mobility transistor with helping gate6 Oct 2026US 12,757,447 B2Taiwan Semiconductor Manufacturing Company.Ltd
- GaN power device and manufacturing method thereof6 Oct 2026US 12,757,448 B2Peking University
- Nitride semiconductor and semiconductor device6 Oct 2026US 12,757,462 B2Kabushiki Kaisha Toshiba
- Carrier structure for etch-back silicon-on-insulator process8 Oct 2026US 2026/0313929 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure and method of manufacture8 Oct 2026US 2026/0313943 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Wide bandgap material in drift well of semiconductor device8 Oct 2026US 2026/0313993 A1
- Semiconductor device and method of making8 Oct 2026US 2026/0314015 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Seal ring structure8 Oct 2026US 2026/0314416 A1GLOBALFOUNDRIES U. S. Inc.
Most cited
By later US patents
- High-electron mobility transistor with zinc oxide3,938US 7,105,868 B2Cermet, Inc. · 2006
- Nanowire field effect transistor device having a replacement gate849US 9,472,618 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Film forming method, semiconductor device, manufacturing method thereof and substrate processing apparatus therefor470US 8,785,311 B2Tokyo Electron Limited · 2014
- Substrate processing apparatus469US 8,999,102 B2Tokyo Electron Limited · 2015
- Formation of heteroepitaxial layers with rapid thermal processing to remove lattice dislocations469US 9,929,011 B2Ultratech, Inc. · 2018