Nitride semiconductor and semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorToshiki Hikosaka
Life of this patent
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Abstract
According to one embodiment, a nitride semiconductor includes a nitride member. The nitride member include a first nitride region, a second nitride region, and intermediate region. The first nitride region includes Alx1Ga1-x1N (0≤x1<1). The Alx1Ga1-x1N includes a first element including at least one selected from the group consisting of Fe and Mn. The second nitride region includes Alx2Ga1-x2N (0≤x2≤1). A direction from the first nitride region to the second nitride region is along a first direction. The intermediate region is provided between the first nitride region and the second nitride region. The intermediate region includes Alz1Ga1-z1N (0≤z1≤1, x1<z1, x2<z1). The Alz1Ga1-z1N includes oxygen. A concentration of oxygen in the nitride member becomes maximum in the intermediate region.
Claims20
A nitride semiconductor, comprising:
- a nitride member, the nitride member including:
- a first nitride region including Alx1Ga1-x1N (0≤x1<1), the first nitride region including a first element including at least one selected from the group consisting of Fe and Mn;
- a second nitride region including Alx2Ga1-x2N (0≤x2<1), a direction from the first nitride region to the second nitride region being along a first direction;
- and
- an intermediate region provided between the first nitride region and the second nitride region, the intermediate region including Alz1Ga1-z1N (0≤z1≤1), a composition of aluminum in the intermediate region is higher than a composition of aluminum in the first nitride region and a composition of aluminum in the second nitride region,
- wherein the nitride member further includes oxygen, and a concentration of oxygen in the intermediate region is higher than a concentration of oxygen in the first nitride region and a concentration of oxygen in the second nitride region.
A nitride semiconductor, comprising:
- a nitride member, the nitride member including:
- a first nitride region including Alx1Ga1-x1N (0≤x1<1);
- a second nitride region including Alx2Ga1-x2N (0≤x2<1), a direction from the first nitride region to the second nitride region being along a first direction;
- and
- an intermediate region provided between the first nitride region and the second nitride region, the intermediate region including Alz1Ga1-z1N (0≤z1≤1), a composition of aluminum in the intermediate region is higher than a composition of aluminum in the first nitride region and a composition of aluminum in the second nitride region,
- wherein the nitride member further includes a first element including at least one selected from the group consisting of Fe and Mn, a concentration of the first element in the first nitride region is higher than a concentration of the first element in the second nitride region, a concentration of the first element in the intermediate region decreasing along a first orientation from the first nitride region to the second nitride region, and
- a change rate of the concentration of the first element in the intermediate region with respect to a change of a position along the first orientation is higher than a change rate of the concentration of the first element in the first nitride region with respect to the change of the position, and is higher than a change rate of the concentration of the first element in the second nitride region with respect to the change of the position.
Dependencies are inferred from the claim text.