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US 5,616,947 AGranted
Semiconductor device having an MIS structure
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorAkiyoshi Tamura
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Abstract
A semiconductor device including a GaAs semiconductor substrate, an insulating layer which is made of material selected from the group MgS, MgSSe and CaZnS and is formed on the GaAs substrate, and a conductive electrode formed on the insulating layer.
Claims6
A semiconductor device comprising:
- a GaAs semiconductor substrate;
- an insulating layer which is made of material consisting essentially of MgS, MgSSe or CaZnS and is formed on the GaAs substrate;
- and
- a conductive electrode formed on the insulating layer.
1 more element
A semiconductor device comprising:
- a GaAs semiconductor substrate having a surface, the surface being covered with a passivation layer which contains at least one of sulfur and selenium and has a thickness of at least one atomic layer;
- an insulating layer which is made of material consisting essentially of MgS, MgSSe, or CaZnS and is formed on the surface of the GaAs semiconductor substrate;
- and
- a conductive electrode formed on the insulating layer.
1 more element
Dependencies are inferred from the claim text.