H10D 62/852
Being group iii-v materials comprising three or more elements
Official title: being Group III-V materials comprising three or more elements, e.g. AlGaN or InAsSbP
H10D62/852 (Being group iii-v materials comprising three or more elements) appears on 877 US grants and 882 published applications in this corpus.
Search patents in H10D- Granted patents
- 877
- Published applications
- 882
- Assignees
- 307
- Inventors
- 1,587
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 1 | 0 |
| 1979 | 1 | 0 |
| 1980 | 2 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 1 | 0 |
| 1984 | 2 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 3 | 0 |
| 1988 | 4 | 0 |
| 1989 | 4 | 0 |
| 1990 | 4 | 0 |
| 1991 | 5 | 0 |
| 1992 | 3 | 0 |
| 1993 | 7 | 0 |
| 1994 | 8 | 0 |
| 1995 | 10 | 0 |
| 1996 | 13 | 0 |
| 1997 | 17 | 0 |
| 1998 | 15 | 0 |
| 1999 | 11 | 0 |
| 2000 | 7 | 0 |
| 2001 | 11 | 5 |
| 2002 | 15 | 15 |
| 2003 | 12 | 19 |
| 2004 | 10 | 13 |
| 2005 | 19 | 12 |
| 2006 | 9 | 15 |
| 2007 | 4 | 12 |
| 2008 | 11 | 23 |
| 2009 | 11 | 14 |
| 2010 | 16 | 18 |
| 2011 | 9 | 31 |
| 2012 | 16 | 24 |
| 2013 | 25 | 36 |
| 2014 | 38 | 59 |
| 2015 | 68 | 114 |
| 2016 | 97 | 72 |
| 2017 | 92 | 79 |
| 2018 | 62 | 45 |
| 2019 | 51 | 51 |
| 2020 | 46 | 39 |
| 2021 | 31 | 29 |
| 2022 | 29 | 28 |
| 2023 | 24 | 24 |
| 2024 | 28 | 35 |
| 2025 | 13 | 38 |
| 2026 | 10 | 32 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Electronic component, method for the control thereof, and method for producing an electronic component15 Sep 2026US 12,740,090 B2Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e. V.
- Bipolar transistors14 Jul 2026US 12,684,790 B2GLOBALFOUNDRIES U. S. Inc.
- Shielded gate transistor19 May 2026US 12,635,170 B2Qorvo US, Inc.
- High electron mobility transistor and method for fabricating the same12 May 2026US 12,628,364 B2United Microelectronics Corp.
- III-Nitride/gallium oxide based high electron mobility transistors5 May 2026US 12,622,008 B2Northwestern University
- Monolithic integration of iii-n devices including a conductive layer1 Oct 2026US 2026/0304919 A1
- Semiconductor process for simultaneously forming a semiconductor structure with features of d-mode and e-mode gan devices10 Sep 2026US 2026/0271386 A1United Microelectronics Corp.
- High stability gan device and gan bridge integrated circuit13 Aug 2026US 2026/0239651 A1Peking University
- Vertical gan moshemts with improved performance structures13 Aug 2026US 2026/0239656 A1Mosel Vitelic, Inc.
- Structures including a high-electron-mobility transistor and related methods6 Aug 2026US 2026/0231460 A1GLOBALFOUNDRIES U. S. Inc.
Most cited
By later US patents
- Nitride based transistors on semi-insulating silicon carbide substrates334US 6,316,793 B1Cree, Inc. · 2001
- Alignment techniques for epitaxial growth processes288US 6,294,018 B1Lucent Technologies Inc. · 2001
- Gallium nitride materials and methods249US 6,617,060 B2Nitronex Corporation · 2003
- Method of fabricating a gallium nitride based semiconductor device with an aluminum and nitrogen containing intermediate layer169US 5,389,571 APioneer Electronic Corporation · 1995
- Gallium nitride materials and methods144US 6,649,287 B2Nitronex Corporation · 2003