Semiconductor device

A semiconductor device, comprising

• a channel layer,
• a barrier layer located on the channel layer and including a material having an energy bandgap different from that of the channel layer,
• a gate electrode layer located on the barrier layer and extending in a first direction,
• a gate semiconductor layer disposed between the barrier layer and the gate electrode layer, and
• a source electrode and a drain electrode connected to the channel layer and spaced apart from the gate electrode layer in a second direction different from the first direction,
• wherein the gate semiconductor layer has an oxygen concentration less than or equal to about 5E17 atom/cm3 as measured by secondary ion mass spectrometry (SIMS).

A semiconductor device, comprising

• a channel layer,
• a barrier layer located on the channel layer and including a material having an energy bandgap different from that of the channel layer,
• a gate electrode layer located on the barrier layer and extending in a first direction,
• a gate semiconductor layer disposed between the barrier layer and the gate electrode layer, and
• a source electrode and a drain electrode connected to the channel layer and spaced apart from the gate electrode layer in a second direction different from the first direction,
• wherein the gate semiconductor layer includes a gate semiconductor material layer disposed on the barrier layer, and an oxide layer disposed between the gate semiconductor material layer and the gate electrode layer,
• the gate semiconductor material layer has an oxygen concentration less than or equal to about 5E17 atom/cm3 as measured by secondary ion mass spectrometry (SIMS), and
• the oxide layer has an oxygen concentration ranging from about 1E18 atom/cm3 to about 1E19 atom/cm3 as measured by secondary ion mass spectrometry.