Semiconductor device and wireless communication device

Abstract

A semiconductor device capable of reducing density of threading potential without increasing a leakage current is provided. A semiconductor device including a channel layer that is included in a laminated body of a nitride semiconductor provided on a substrate, and a barrier layer that is included in the laminated body on an upper layer side with respect to the channel layer, in which the laminated body on a lower layer side with respect to the channel layer includes an n-type conversion factor that converts the nitride semiconductor into an n-type in a concentration profile having at least one or more peaks in a lamination direction of the laminated body, and a compensated area including 6×1018 cm−3 or more of a compensation factor for compensating for the n-type conversion factor is provided in the laminated body on an upper layer side with respect to peaks of the concentration profile of the n-type conversion factor.

Dependencies are inferred from the claim text.